Customization Service
TODAY
2024/03/29
Basic Information I
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Company
Corp.
Contact Person
Name
Business Email
Please use a business email address instead of a personal one (e.g. Gmail).
Basic Information II
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T/O Date
YYYY / MM / DD
NTO/ Shuttle
NTO (full mask tape out)
Application
MCU
Foundry/Fab
XYZ / Fab3
Process Name
0.18um 5V CE
Customer Project Name
Y1234567
Customer Top Metal
4 Metal
Top Metal Thickness
9KÅ
Production Forecast
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2021 Wafer (PCS) /month
200/month
2022 Wafer (PCS) /month
500/month
2023 Wafer (PCS) / month
1000/month
Memory Density (bits)
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MTP
8K*16
Information
32*16
EEPROM
128*8
Device type list
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Core NMOS
nmos_1p8
Core PMOS
pmos_1p8
IO NMOS
nmos_5p0
IO PMOS
pmos_5p0
Reference IP Name and version
YEG8K16Y18B5BY1_Y00

If your characterization request is the same as existing IP, please provide the IP name you refer to and pass the form below.

If you have special characterization request or new NRE project, please fill out the form below.

Endurance
Must Request
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MTP, Information
1,000 Cycles
EEPROM
10,000 Cycles
Internal Charge Pump
(with / without)
with / without
Power Supply for MTP IP
Must Request
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Single_V / Dual _V,_V
Single 5V/Dual 1.8V, 5V
Standby mode
1 uA (typ.)
Chip Substrate bias level
negative / 0 voltage
Which layer for ISO
with ISO: NBL / DNW /
other : ____ layer / without ISO : NA
Chip ISO bias level :_V
(if with ISO process)
with ISO : 40 V
/ without ISO : Non-ISO
Operation Temperature
Must Request
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Read
-40℃ to 85℃
Write
25 ℃
Read Function
VDD Voltage Range
Must Request
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MTP, Information
1.8V~5.5V
EEPROM
1.8V~5.5V
Read Access Time
Must Request
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MTP, Information
60 ns (max.) @ 4.5V ≤ VDD ≤ 5.5V
300 ns (max.) @ 1.8V ≤ VDD < 4.5V
EEPROM
300 ns (max.) @ 1.8V ≤ VDD ≤ 5.5V
Current @ Device
Must Request
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VDD
6.5 mA (typ.) @ 5V, 16 MHz
3.5 mA (typ.) @ 5V, 4MHz
0.8 mA (typ.) @ 5V, 1MHz
Write Function
VDD Voltage Range
Must Request
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MTP, Information
4.5V ~ 5.5V
EEPROM
2.2V~5.5V
External HV range
(if without internal charge pump)
without pump : 7.8V~8.2V
/ with pump : NA
Write Time
Must Request
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MTP, Information
0.5 ms (typ.)
EEPROM
0.7 ms (typ.)
Current
Must Request
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VDD
20 mA (typ.)
VPP
(if without internal charge pump)
without pump : 2 mA (typ.)
/ with pump : NA
Message