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AEC-Q100 (Automotive)
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AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x YUF4K08V15B6BB2_A00
AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 6V 64x8 v YRN6408V15B6BB5_Y00
EEPROM+Information VIS BCD 0.15μm 6V 8Kx8 v YEF8K08V15B6BA5_Y00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 v YEF8K08V15B6BB2_A00
EEPROM VIS BCD 0.15μm 6V 128x8 v YEN12808V15B6BA5_Y00
AEC-Q100 (Automotive)
Grade 1
Process Name
TSMC 0.18 UM CMOS MIXED SIGNAL GENERAL PURPOSE IIA 1P6M SALICIDE 1.8V/5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM tsmc Mixed Mode 0.18μm 5V 16x16 v YRN1616T18M5AA6_Y00
EEPROM tsmc Mixed Mode 0.18μm 5V 64x16 v YEN6416T18M5AA2_Y00
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BF1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5AA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 3.3V 16Kx16 v YMG16K16F15L3BB1_A00
MTP+EEPROM Globalfoundries LG 0.15μm 3.3V 16Kx16 v YME16K16F15L3BA1_Y00
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AB1_Y10
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AB1_Y00
FTP+Information Globalfoundries LG 0.15μm 5V 2Kx16 x YGF2K16F15L5AA1_Y10
Process Name
0.18 um 1.8V/6V/12-40V LDMOS dual-gate isolated BCDLite Gen2 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Globalfoundries BCD 0.18μm 5V 6Kx32 v YMN6K32F18B5AA1_Y00
MTP+Information Globalfoundries BCD 0.18μm 5V 5Kx16 v YEF5K16F18B5BA1_A00
MTP+Information Globalfoundries BCD 0.18μm 5V 5Kx16 v YEF5K16F18B5BA1_A01
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v YEN16K08F18B5AB1_A01
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5BA2_Y00
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5AA2_A10
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5AA2_Y10
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YMN8K32F18B5AA1_Y00
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YEN8K32F18B5BA1_A00
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YEN8K32F18B5AA1_A00
MTP Globalfoundries BCD 0.18μm 5V 8Kx8 v YEN8K08F18B5AC1_A00
MTP Globalfoundries BCD 0.18μm 5V 4Kx32 v YEN4K32F18B5AA1_A00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v YEN16K08F18B5AA1_B01
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YEG8K32F18B5AD1_Y00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BC1_B11
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BB1_Y10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BB1_B11
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEG4K16F18L3BA1_Y01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BC1_A10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 v YEF2K16F18L3BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx16 x YNF4K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x YNF2K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x YNF2K16F18L3BB1_Y11
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x YNF2K16F18L3BB1_Y10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x YNF2K16F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BR1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BA1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx16 x YUF1K16F18L5BA1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YME8K16F18L5BA1_Y10
FTP+Information Globalfoundries LG 0.18μm 3.3V 4Kx8 v YFF4K08F18L3AA1_Y00
EEPROM Globalfoundries LG 0.18μm 5V 128x8 v YEN12808F18L5BA2_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BD1_A00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BQ1_B02
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BQ1_C01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BS1_C10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BA1_B01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BP1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx8 v YEG8K08F18L5BQ1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BC1_A00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BT1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v YEG16K08F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 1Kx14 v YEG1K14F18L5BB1_Y11
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BB1_Y10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BS1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_B00
MTP+EEPROM Globalfoundries LG 0.18μm 5V 16Kx8 v YEE16K08F18L5BA1_B00
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 4Kx16 v YEE4K16F18L5BS1_Y10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 2Kx16 v YEE2K16F18L5BR1_C10
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YMG8K32F18B5AB1_Y00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 24Kx8 v YMG24K08F18B5AA1_Y10
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YEN12808F18B5AA2_Y01
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 5Kx32 v YEE5K32F18B5AA1_Y00
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 5Kx32 v YEE5K32F18B5AA1_A00
Process Name
0.18um LOGIC-S 6V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM PSMC HV 0.18μm 6V 256x8 v YE25608P18H6AC2_Y00
Process Name
0.18um Mixed Signal 1.8V/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SMIC Mixed Mode 0.18μm 5V 256x8 v YEN25608S18M5AA2_A01
EEPROM SMIC Mixed Mode 0.18μm 5V 256x8 v YRN25608S18M5AA2_Y00
Process Name
0.18um MS and BCD Salicide 1.8V/5V/10V/12V/20V/35V/40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AB2_Y00
EEPROM SMIC BCD 0.18μm 5V 128x8 v YRN12808S18B5AB2_Y10
Process Name
0.18um-SA(Epi) 5V_18V_40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM PSMC HV 0.18μm 6V 256x8 v YE25608P18H6AD2_Y00
Process Name
0.28 um0.22 um Embedded High Voltage 3.3 V6.75 V13.5 V 2P5M P-Sub Polycide Gox65310 Low High Low Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM UMC HV 0.28μm 3.3V 128x8 v YE12808U28H3AB1_Y00
Process Name
0.35um 5V/8V/10V/18V/25V/40V 2P3M BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nuvoton BCD 0.35μm 5V 4x8 x YUO0408W35B5NA1_A01
OTP Nuvoton BCD 0.35μm 5V 4x8 x YPN0408W35B5NA1_A00
Process Name
1.2V/5V Mixed-Signal and Power Management Process(POR1.9)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Tower BCD 0.065μm 5V 128x16 v YMN12816O65B5BA1_A00
MTP+Information Tower BCD 0.065μm 5V 8Kx32 v YEF8K32O65B5BA1_Y10
Process Name
90nm LOGIC-M, 1.32V(1.2V)/6V/32V tri-voltages Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM PSMC HV 0.09μm 6V 512x8 x YUN51208E90H6AB2_Y00
Process Name
CB015RL20001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM, 1P6M, SALICIDE, 1.8/6V(Vgs=1.8/6V, Vds=12/16.5/18/20/24/26/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 6V 64x8 v YEN6408V15B6AC2_A03
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_A10
EEPROM VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_A11
EEPROM VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_A00
EEPROM VIS BCD 0.15μm 5V 64x8 v YE6408V15B6AA2_A00
Process Name
CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 6Kx32 v YEN6K32V15B5BA1_A10
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_Y11
EEPROM VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_Y10
EEPROM VIS BCD 0.15μm 5V 13x8 x YUN1308V15B5AA2_A00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 x YUF8K08V15B6BC2_A00
EEPROM VIS BCD 0.15μm 5V 64x8 x YSN6408V15B5AA2_Y10
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x YNF4K08V15B6BA2_A01
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x YNF4K08V15B6BA2_A00
EEPROM VIS BCD 0.15μm 5V 1Kx8 v YEN1K08V15B5BA2_A00
Process Name
CB015RL23019-0.15UM(Front-End/Back-End 0.18UM/0.15UM), BCD 1P6M, SALICIDE BURIED LAYER EPI, 1.8/5/6/9/12/16/20/24/29/30/40/45/60V (Vgs=1.8/5V, Vds=1.8/5/6/9/12/16/20/24/29/30/40/45/60V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 8Kx32 v YMN8K32V15B5BB1_Y00
MTP VIS BCD 0.15μm 5V 6Kx32 v YMN6K32V15B5BA1_Y10
MTP VIS BCD 0.15μm 5V 3584x32 v YMN358432V15B5BA1_Y00
Process Name
CB025RL20008-0.25UM, CMOS BCD Low Ron LDMOS MiM, 1P5M, SALICIDE, 2.5/5V(Vgs=2.5/5V, Vds=12/18/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.25μm 5V 32x8 v YE3208V25B5AB2_A00
EEPROM VIS BCD 0.25μm 5V 16x8 v YE1608V25B5AB2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.25μm 5V 32x8 x YUN3208V25B5AA2_A00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_C00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_A00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AA_A10
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AA_A03
MTP VIS BCD 0.25μm 5V 32x8 x YU3208V25B5AA2_A01
EEPROM VIS BCD 0.25μm 5V 512x8 v YRN51208V25B5AB2_A10
EEPROM VIS BCD 0.25μm 5V 64x8 v YEN6408V25B5AB2_A11
EEPROM VIS BCD 0.25μm 5V 64x8 v YEN6408V25B5AA2_A00
EEPROM VIS BCD 0.25μm 5V 64x8 v YE6408V25B5AC2_A00
Process Name
CB030RL10006-0.30UM, CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Deep N-Well, 5/8/12/18/24/30/40V(Vgs=5V, Vds=5/8/12/18/24/30/40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.3μm 5V 4x8 x YU0408V30B5AA_A00
Process Name
CB040RL10003-0.40UM(Front-End/Back-End 0.50UM/0.35UM), CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Buried Layer EPI, 40V(Vgs=5/20/40V, Vds=5/20/40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.4μm 5V 64x10 v YEN6410V40B5AA2_A00
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS Mixed Mode 0.15μm 3.3V 2Kx32 v YEF2K32V15M3BA1_A10
MTP VIS Mixed Mode 0.15μm 3.3V 256x32 v YEN25632V15M3BA1_A00
MTP VIS Mixed Mode 0.15μm 3.3V 4Kx32 v YE4K32V15M3BF1_A00
MTP+Information VIS Mixed Mode 0.15μm 3.3V 8Kx32 v YEF8K32V15M3BC1_A10
MTP+Information VIS Mixed Mode 0.15μm 3.3V 8Kx32 v YEF8K32V15M3BB1_A00
MTP VIS Mixed Mode 0.15μm 3.3V 8Kx32 v YE8K32V15M3BF1_A00
Process Name
CV011MD00010-0.11UM, CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, Deep N-Well, 1.5/3.3V(Vgs=1.5/3.3V, Vds=1.5/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS Mixed Mode 0.11μm 3.3V 6Kx32 v YEN6K32V11M3BA1_A11
MTP VIS Mixed Mode 0.11μm 3.3V 6Kx32 v YEN6K32V11M3BA1_A10
MTP VIS Mixed Mode 0.11μm 3.3V 64x32 v YEN6432V11M3BA1_Y00
MTP VIS Mixed Mode 0.11μm 3.3V 4Kx32 v YEN4K32V11M3BA1_A10
MTP VIS Mixed Mode 0.11μm 3.3V 16Kx32 v YEN16K32V11M3BA1_A00
Process Name
CV015MD00016-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, 1.8/3.3/18V(Vgs=1.8/3.3/18V, Vds=1.8/3.3/18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 3.3V 2Kx32 v YE2K32V15H3BD1_A00
MTP+Information VIS HV 0.15μm 3.3V 4Kx32 v YEF4K32V15H3BA1_Y10
MTP VIS HV 0.15μm 3.3V 8Kx32 v YEN8K32V15H3BD1_A00
MTP VIS HV 0.15μm 3.3V 8Kx32 v YEN8K32V15H3BP1_A10
MTP VIS HV 0.15μm 3.3V 64x32 v YEN6432V15H3BD1_A11
MTP VIS HV 0.15μm 3.3V 64x32 v YEN6432V15H3BD1_A10
MTP VIS HV 0.15μm 3.3V 512x32 v YEN51232V15H3BD1_A00
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.3μm 3.3V 64x10 v YRN6410V30H3AA1_Y10
EEPROM VIS HV 0.3μm 3.3V 36x8 v YRN3608V30H3AA1_Y00
EEPROM VIS HV 0.3μm 3.3V 1x8 v YE0108V30H3AA_Y10
Process Name
CV035MS00001-0.35UM, CMOS High Voltage Mixed Signal Based LDMOS, 2P4M, POLYCIDE, Buried Layer EPI, 3.3/40V(Vgs=3.3/40V, Vds=40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.35μm 3.3V 8Kx8 v YF8K08V35H3BB_A00
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix BCD 0.18μm 5V 8Kx32 v YMN8K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 8Kx32 v YMN8K32X18B5AA1_Y11
MTP SKHynix BCD 0.18μm 5V 32Kx8 v YMN32K08X18B5AA1_Y10
MTP Skhynix BCD 0.18μm 5V 16Kx32 v YMN16K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 16Kx8 v YMN16K08X18B5AA1_Y10
Process Name
HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM HHGRACE LG 0.095μm 5V 64x8 v YRN6408C95L5BA2_Y10
MTP HHGRACE LG 0.095μm 5V 4Kx16 v YMN4K16C95L5BA1_Y10
FTP+Information HHGRACE LG 0.095μm 5V 4Kx32 v YFF4K32C95L5BA1_Y10
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix LG 0.11μm 3.3V 8Kx32 v YMN8K32X11L3BA1_Y00
MTP+Information SKHynix LG 0.11μm 3.3V 16Kx32 v YMF16K32X11L3BA1_Y10
MTP+Information SKHynix LG 0.11μm 3.3V 16Kx32 v YMF16K32X11L3AA1_Y11
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SK keyfoundry LG 0.13μm 3.3V 40x8 v YRN4008N13L3AA2_A00
EEPROM SK keyfoundry LG 0.13μm 3.3V 512x8 v YRN51208N13L3AA2_A00
EEPROM SK keyfoundry LG 0.13μm 3.3V 40x8 v YRN4008N13L3AA2_Y00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AA2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AA2_A01
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AB2_A00
EEPROM SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AA2_Y00
EEPROM SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AD2_A00
EEPROM SK keyfoundry LG 0.13μm 3.3V 128x8 v YEN12808N13L3AD2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v YEN12808N13L3AB2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v YEN12808N13L3AA2_A00
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Key-foundry LG 0.16μm 3.3V 256x8 v YEN25608N16L3AB2_A00_110
EEPROM SK keyfoundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_Y00_110
EEPROM Key-foundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_A01_110
EEPROM SK keyfoundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_A02_110
EEPROM Key-foundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_A02_110
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SK keyfoundry LG 0.18μm 3.3V 256x8 v YEN25608N18L3AE2_A01
EEPROM SK keyfoundry LG 0.18μm 3.3V 256x8 v YEN25608N18L3AE2_Y00
EEPROM SK keyfoundry LG 0.18μm 3.3V 256x8 v YEN25608N18L3AE2_Y01
Process Name
HL18GFL-AMA-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SK keyfoundry LG 0.18μm 3.3V 64x8 v YRN6408N18L3AA2_Y01
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP MXIC LG 0.18μm 5V 1Kx16 x YUN1K16M18L5BB1_A10
MTP MXIC LG 0.18μm 5V 2Kx16 x YUN2K16M18L5BF1_A10
MTP MXIC LG 0.18μm 5V 4Kx16 x YUN4K16M18L5BE1_A11
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BE1_A10_105
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v YEF4K16M18L5BB1_A10
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v YEF4K16M18L5BB1_Y10
MTP MXIC LG 0.18μm 5V 8Kx8 v YEN8K08M18L5BB1_A01
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BE1_A10
Process Name
LCDDr 110nm-N2 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.11μm 5V 3Kx8 x YGN3K08L11H5BA1_Y00
FTP Nexchip HV 0.11μm 5V 2Kx8 x YGN2K08L11H5BB1_A00
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Nexchip HV 0.09μm 6V 512x8 x YUN51208L90H6AB2_A01
EEPROM Nexchip HV 0.09μm 6V 512x8 x YUN51208L90H6AA2_Y00
EEPROM Nexchip HV 0.09μm 6V 256x8 x YSN25608L90H6AA2_Y00
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A14
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BA1_A11
MTP+EEPROM Nexchip LG 0.11μm 5V 8Kx32 v YME8K32L11L5BA1_Y10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AA1_Y10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AB1_A11
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AA1_Y00
FTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YGF2K16L11L5AC1_A00
FTP+Information Nexchip LG 0.11μm 5V 1Kx16 x YGF1K16L11L5AB1_A00
Process Name
Silergy 0.162 um Mixed Mode 5V 1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AB2_Y10
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AA2_Y10
Process Name
Silergy 0.162um Mixed Mode 5V 1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM HJTC Mixed Mode 0.16μm 5V 128x8 v YRN12808H16M5AA2_Y10
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP tsmc BCD 0.18μm 5V 8Kx32 v YMN8K32T18B5BA1_Y00
MTP tsmc BCD 0.18μm 5V 64x8 v YMN6408T18B5AA2_Y00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BE1_A10
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BB1_A00
MTP+Information tsmc BCD 0.18μm 5V 4Kx32 v YEF4K32T18B5BE1_A12
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YEF8K32T18B5BE1_A11
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BC1_A00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BB1_A10
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 24Kx8 v YMF24K08T18B5BA1_A10
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YMF16K32T18B5BA1_Y10
EEPROM tsmc BCD 0.18μm 5V 64x16 v YEN6416T18B5AB2_B00
EEPROM tsmc BCD 0.18μm 5V 64x16 v YEN6416T18B5AB2_Y00
EEPROM tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_Y10
EEPROM tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_Y00
EEPROM tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_B10
MTP tsmc BCD 0.18μm 5V 12Kx32 v YEN12K32T18B5BB1_Y00
EEPROM tsmc BCD 0.18μm 5V 128x8 v YEN12808T18B5AB2_Y10
MTP+Information tsmc BCD 0.18μm 5V 16Kx8 v YEF16K08T18B5BA1_A11
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YEF16K32T18B5BD1_Y00
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YEF16K32T18B5BE1_A00
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