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Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | Globalfoundries | BCD | 0.18μm | 5V | 16Kx8 | v | 692x1309 | YEN16K08F18B5AA1_C00 |
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 8Kx16 | v | 563x919.4 | YEG8K16F18L3BC1_B00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 5V | 4Kx16 | v | 685x868 | YEG4K16F18L5BP1_B12 |
Key Feature
Customized IP
Process Name
0.18um LOGIC-S 6V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | PSMC | HV | 0.18μm | 6V | 32x8 | v | 598x523 | YE3208P18H6AC2_A00 | |
EEPROM | PSMC | HV | 0.18μm | 6V | 32x8 | v | 598x523 | YE3208P18H6AC2_A01 |
Key Feature
Customized IP
Process Name
0.18um Mixed Signal 1.8V/5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | SMIC | Mixed Mode | 0.18μm | 5V | 96x8 | v | 325x968 | YEN9608S18M5AA2_A01 | |
EEPROM | SMIC | Mixed Mode | 0.18μm | 5V | 96x8 | v | 325x968 | YEN9608S18M5AA2_A00 |
Key Feature
Customized IP
Process Name
CV011MS00005-0.11UM High Voltage 1P6M SALICIDE 1.5/7/32V(Vgs=1.5/7/32V, Vds=1.5/7/32V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_A01 | |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_B00 | |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_C01 | |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_C00 | |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_B01 | |
EEPROM | VIS | HV | 0.11μm | 7V | 512x8 | x | 524x405 | YUN51208V11H7AB2_A00 |
Key Feature
Customized IP
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | HHGRACE | LG | 0.18μm | 5V | 4Kx16 | x | 322x895 | YU4K16C18L5AC1_A00 | |
MTP | HHGRACE | LG | 0.18μm | 5V | 1Kx14 | x | 193x656 | YU1K14C18L5AC1_A00 |
Key Feature
Customized IP
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | Key-foundry | LG | 0.16μm | 3.3V | 1Kx8 | v | 463.1x1951.4 | YEN1K08N16L3AA2_Y00_110 |
Key Feature
Customized IP
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | Key-foundry | LG | 0.18μm | 5V | 4Kx16 | x | 375x904 | YNN4K16N18L5BB1_A10 | |
MTP | Key-foundry | LG | 0.18μm | 5V | 4Kx16 | x | 375x904 | YNN4K16N18L5BA1_A00 |
Key Feature
Customized IP
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 4Kx32 | v | 663.6x1419.6 | YMG4K32M18L5BA1_A10_105 |
Key Feature
Customized IP
Process Name
L50G-0.5um CMOS DPTM POWER CDMOS (5V/24V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP+Information | MXIC | LG | 0.5μm | 5V | 64x8 | v | 656.4x333.4 | YEF6408M55L5AA1_A00 |
Key Feature
Customized IP
Process Name
L50W-0.5um CMOS DPTM POWER CMOS (5V/12V) (TRIPLE WELL)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP+Information | MXIC | LG | 0.5μm | 5V | 64x8 | v | 656.4x333.4 | YEF6408M55L5AB1_A10 |
Key Feature
Customized IP
Process Name
LCDD 0.15um-S 3.3V_18V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | PSMC | LG | 0.15μm | 3.3V | 128x8 | v | 388x663 | YF12808P15L3AB_B00 |
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 8Kx16 | v | 566x1140 | YEG8K16L11L5BC1_A10 |
Key Feature
Customized IP
Process Name
Silergy 0.162 um Mixed Mode 5V 1P5M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x658 | YRN12808S16M5AA2_B11 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x658 | YRN12808S16M5AA2_B10 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x658 | YRN12808S16M5AA2_A11 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x658 | YRN12808S16M5AA2_A10 | |
EEPROM | HJTC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x657.929 | YRN12808H16M5AA2_A11 | |
EEPROM | HJTC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x657.929 | YRN12808H16M5AA2_A10 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x618 | YEN12808S16M5AA2_A02 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x618 | YEN12808S16M5AA2_A00 | |
EEPROM | SMIC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x618 | YEN12808S16M5AA2_A01 | |
EEPROM | HJTC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x618 | YE12808H16M5AA2_B00 | |
EEPROM | HJTC | Mixed Mode | 0.16μm | 5V | 128x8 | v | 452x618 | YE12808H16M5AA2_A02 |
Key Feature
Customized IP
Process Name
Silergy 0.35 um Mixed Mode 3.3V/ 5V 1P2M Salicide Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
EEPROM | HJTC | Mixed Mode | 0.35μm | 3.3V | 16x8 | v | 594x840 | YE1608H35M3AC_A10 | |
EEPROM | HJTC | Mixed Mode | 0.35μm | 3.3V | 16x8 | v | 594x840 | YE1608H35M3AC_A00 |
Key Feature
Customized IP
Process Name
UMC 0.18 um BCD 1.8 V/5.0 V 1P6M High Voltage P-Sub Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | UMC | BCD | 0.18μm | 5V | 32x8 | x | 300.3x370 | YU3208U18B5AA_A05 | |
EEPROM | UMC | BCD | 0.18μm | 5V | 32x8 | v | 325x905 | YE3208U18B5AA_A02 |
Key Feature
Customized IP
Process Name
UMC 0.28 um Embedded High Voltage 3.3 V/9 V/18 V 2P5M P-Sub Polycide Gox65/435 Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name | SPEC |
MTP | UMC | HV | 0.28μm | 3.3V | 64x8 | v | 773x310 | YEN6408U28H3AA1_A00 |
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Process Name
0.18um MS and BCD Salicide 1.8_5V CMOS and 5-140V LDMOS Automotive Process
Process Name
0.35um(backend 0.32um) 3.3V,3.3V / 5V CMOS
Process Name
CanSemi Logic/Analog/RF 0.18 um 1P6M Industry_Baseline_Generic 1.8V/3.3V Process
Process Name
CanSemi Logic/Analog/RF 0.18 um 1P6M Industry_Baseline_Generic Pure 3.3V Process
Process Name
CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Process Name
HP18EC30-0.18um 1.8V/6.0V, 8V, 12V, 16V, 20V, 24V, 30V(Vg=6.0V), 24/30V (Vg=18V) BCD Process
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Process Name
L18B-0.18um CMOS SPDM/SPTM/SPQM BCD(5V/18V)
Process Name
L18B1-0.18um CMOS SPDM/SPTM/SPQM BCD (5V/120V) (EPI)
Process Name
LCDDr 110nm-N2 1.5V_6V_32V
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Process Name
LOGIC 110nm-LP2 1.5V_5V
Process Name
Silterra D18V BCD 180nm Gen3 Tech
Process Name
TPS65PM-65nm 1.2V/5V Mixed-Signal and Power Management Process
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Process Name
TSMC 90 NM CMOS HIGH VOLTAGE MIXED SIGNAL BASED LOW POWER BCD PLUS DUAL GATE 1P6M SALICIDE CU_LOW K 1.5/1.8/4.5/5/6V/VG1.5/5V AND 1.5/1.8/4.5/5/6/12/16/29V/VG1.5/5V