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Key Feature
Customized IP
Process Name
0.153um 5V CMOS EN Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Rongsemi | LG | 0.153μm | 5V | 4Kx16 | x | YGF4K16RA153L5AC1_A01 | |
| OTP+Information | Rongsemi | LG | 0.153μm | 5V | 16Kx8 | v | YFF16K08RA153L5BA1_A11 |
Key Feature
Customized IP
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Globalfoundries | LG | 0.15μm | 3.3V | 16Kx8 | v | YMF16K08F15L3BA1_A00 | |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 2Kx16 | v | YEG2K16F15L5BA1_B11 | |
| MTP+Information | Globalfoundries | LG | 0.15μm | 3.3V | 8Kx16 | v | YEF8K16F15L3BA1_B11 |
Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 16Kx8 | v | YMG16K08F18B5BA1_A00 |
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx32 | v | YEF2K32F18L5BA1_B10 | |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 5V | 4Kx16 | v | YMG4K16F18L5BB1_A10 |
Key Feature
Customized IP
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | Nexchip | HV | 0.11μm | 3.3V | 512x8 | x | YUN51208L11H5BC2_A00 | |
| FTP | Nexchip | HV | 0.11μm | 1.5V | 512x8 | x | YGN51208L11H5BA2_A00 |
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AF1_A01 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AD1_A11 | |
| FTP+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YFF4K16L11L5BA1_A11 | |
| FTP+Information | Nexchip | LG | 0.11μm | 5V | 6Kx16 | v | YFF6K16L11L5BA1_A11 | |
| FTP+Information | Nexchip | LG | 0.11μm | 5V | 8Kx16 | v | YFF8K16L11L5BA1_A11 |
Key Feature
Customized IP
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+Information | tsmc | BCD | 0.18μm | 5V | 6Kx32 | v | YMF6K32T18B5BD1_A00 |
Process Name
0.153um 5V CMOS EN Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Rongsemi | LG | 0.153μm | 5V | 8Kx16 | v | YFF8K16RA153L5BA1_A01 |
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx8 | v | YMG8K08F15L5BA1_A10 | |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx32 | v | YMG4K32F15L5AA1_A10 | |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 3.3V | 16Kx16 | v | YMG16K16F15L3BA1_A00 |
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 1Kx32 | v | YEF1K32F18L5BA1_A11 | |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx16 | v | YEG2K16F18L5BP1_B10 | |
| MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx32 | v | YEF2K32F18L5BB1_A01 | |
| MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 4Kx32 | v | YEF4K32F18L5BB1_A01 |
Process Name
90nm_BCD_Low Power G2_1.5V/5V(Vgs),5V/9V/12V/24V/30V/40V(Vds) Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YFN8K32C90B5BA1_A00 | |
| FTP | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YFN8K32C90B5BB1_A00 |
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Cansemi | LG | 0.095μm | 5V | 1Kx14 | x | YGF1K14G95L5AA1_A10 |
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | PSMC | HV | 0.09μm | 5V | 4Kx8 | x | YGF4K08P90H5BB1_A10 |
Process Name
LOGIC 110nm-G 1.5V_3.3V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP | Nexchip | LG | 0.11μm | 3.3V | 256x8 | v | YRN25608L11L3AB2_A00 |
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| EEPROM | Nexchip | LG | 0.11μm | 5V | 256x8 | v | YRN25608L11L5BI2_A10 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AK1_A00 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AJ1_A10 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AI1_A01 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AE1_A10 | |
| FTP+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | x | YGF4K16L11L5AQ1_A10 |