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IO device Type
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Charge Pump
AEC-Q100 (Automotive)
IP Name
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Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1309 YEN16K08F18B5AA1_C00
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v 563x919.4 YEG8K16F18L3BC1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YEG4K16F18L5BP1_B12
Key Feature
Customized IP
Process Name
0.18um LOGIC-S 6V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM PSMC HV 0.18μm 6V 32x8 v 598x523 YE3208P18H6AC2_A00
EEPROM PSMC HV 0.18μm 6V 32x8 v 598x523 YE3208P18H6AC2_A01
Key Feature
Customized IP
Process Name
0.18um Mixed Signal 1.8V/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM SMIC Mixed Mode 0.18μm 5V 96x8 v 325x968 YEN9608S18M5AA2_A01
EEPROM SMIC Mixed Mode 0.18μm 5V 96x8 v 325x968 YEN9608S18M5AA2_A00
Key Feature
Customized IP
Process Name
CV011MS00005-0.11UM High Voltage 1P6M SALICIDE 1.5/7/32V(Vgs=1.5/7/32V, Vds=1.5/7/32V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_A01
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_B00
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_C01
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_C00
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_B01
EEPROM VIS HV 0.11μm 7V 512x8 x 524x405 YUN51208V11H7AB2_A00
Key Feature
Customized IP
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP HHGRACE LG 0.18μm 5V 4Kx16 x 322x895 YU4K16C18L5AC1_A00
MTP HHGRACE LG 0.18μm 5V 1Kx14 x 193x656 YU1K14C18L5AC1_A00
Key Feature
Customized IP
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Key-foundry LG 0.16μm 3.3V 1Kx8 v 463.1x1951.4 YEN1K08N16L3AA2_Y00_110
Key Feature
Customized IP
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP Key-foundry LG 0.18μm 5V 4Kx16 x 375x904 YNN4K16N18L5BB1_A10
MTP Key-foundry LG 0.18μm 5V 4Kx16 x 375x904 YNN4K16N18L5BA1_A00
Key Feature
Customized IP
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx32 v 663.6x1419.6 YMG4K32M18L5BA1_A10_105
Key Feature
Customized IP
Process Name
L50G-0.5um CMOS DPTM POWER CDMOS (5V/24V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information MXIC LG 0.5μm 5V 64x8 v 656.4x333.4 YEF6408M55L5AA1_A00
Key Feature
Customized IP
Process Name
L50W-0.5um CMOS DPTM POWER CMOS (5V/12V) (TRIPLE WELL)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information MXIC LG 0.5μm 5V 64x8 v 656.4x333.4 YEF6408M55L5AB1_A10
Key Feature
Customized IP
Process Name
LCDD 0.15um-S 3.3V_18V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP PSMC LG 0.15μm 3.3V 128x8 v 388x663 YF12808P15L3AB_B00
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1140 YEG8K16L11L5BC1_A10
Key Feature
Customized IP
Process Name
Silergy 0.162 um Mixed Mode 5V 1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x658 YRN12808S16M5AA2_B11
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x658 YRN12808S16M5AA2_B10
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x658 YRN12808S16M5AA2_A11
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x658 YRN12808S16M5AA2_A10
EEPROM HJTC Mixed Mode 0.16μm 5V 128x8 v 452x657.929 YRN12808H16M5AA2_A11
EEPROM HJTC Mixed Mode 0.16μm 5V 128x8 v 452x657.929 YRN12808H16M5AA2_A10
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x618 YEN12808S16M5AA2_A02
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x618 YEN12808S16M5AA2_A00
EEPROM SMIC Mixed Mode 0.16μm 5V 128x8 v 452x618 YEN12808S16M5AA2_A01
EEPROM HJTC Mixed Mode 0.16μm 5V 128x8 v 452x618 YE12808H16M5AA2_B00
EEPROM HJTC Mixed Mode 0.16μm 5V 128x8 v 452x618 YE12808H16M5AA2_A02
Key Feature
Customized IP
Process Name
Silergy 0.35 um Mixed Mode 3.3V/ 5V 1P2M Salicide Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM HJTC Mixed Mode 0.35μm 3.3V 16x8 v 594x840 YE1608H35M3AC_A10
EEPROM HJTC Mixed Mode 0.35μm 3.3V 16x8 v 594x840 YE1608H35M3AC_A00
Key Feature
Customized IP
Process Name
UMC 0.18 um BCD 1.8 V/5.0 V 1P6M High Voltage P-Sub Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP UMC BCD 0.18μm 5V 32x8 x 300.3x370 YU3208U18B5AA_A05
EEPROM UMC BCD 0.18μm 5V 32x8 v 325x905 YE3208U18B5AA_A02
Key Feature
Customized IP
Process Name
UMC 0.28 um Embedded High Voltage 3.3 V/9 V/18 V 2P5M P-Sub Polycide Gox65/435 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP UMC HV 0.28μm 3.3V 64x8 v 773x310 YEN6408U28H3AA1_A00
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v 346x2176 YMG8K16F15L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v 346x2176 YMG8K16F15L5BC1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v 346x2171 YMG8K16F15L5BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx8 v 346x1334 YMG8K08F15L5BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v 346x1479 YMG4K16F15L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v 346x1477 YMG4K16F15L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v 346x1479 YMG4K16F15L5BB1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 3.3V 16Kx16 v 839x1345 YMG16K16F15L3BA1_A00
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v 346x2097 YMF8K16F15L5BB1_A01
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x 412x427 YGF4K16F15L5AA1_A10
FTP+Information Globalfoundries LG 0.15μm 5V 1Kx16 x 412x213 YGF1K16F15L5AA1_A10
MTP+Information Globalfoundries LG 0.15μm 3.3V 8Kx16 v 574x752 YEF8K16F15L3BA1_B11
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information Globalfoundries BCD 0.18μm 5V 8Kx8 v 692x876 YMF8K08F18B5BA1_A00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 5Kx32 v 692x1583 YEG5K32F18B5BA1_A00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1377 YEG16K08F18B5BA1_B14
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1377 YEG16K08F18B5BA1_B13
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1377 YEG16K08F18B5BA1_B12
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1377 YEG16K08F18B5BA1_B11
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx32 v 685x1267 YEF4K32F18L5BB1_A01
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x 390x591 YNF2K16F18L5BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1266 YMG8K16F18L5BQ1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1240 YEG8K16F18L5BP1_C12
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1266 YEG8K16F18L5BQ1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1266 YEG8K16F18L5BR1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v 563x885 YEG8K16F18L3BA1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 4Kx16 v 563x575 YEG4K16F18L3BA1_B11
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v 563x835 YEG16K08F18L3BB1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 1Kx16 v 563x380 YEG1K16F18L3BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v 685x699 YEG2K16F18L5BP1_B10
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx32 v 685x738 YEF1K32F18L5BA1_A11
MTP+EEPROM Globalfoundries LG 0.18μm 3.3V 4Kx16 v 563x690 YEE4K16F18L3BA1_B10
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v 692x2468 YEG8K32F18B5BA1_A12
Process Name
0.18um MS and BCD Salicide 1.8_5V CMOS and 5-140V LDMOS Automotive Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM SMIC BCD 0.18μm 5V 64x8 v 329x523 YRN6408S18B5AA2_A00
Process Name
0.35um(backend 0.32um) 3.3V,3.3V / 5V CMOS
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP Nuvoton LG 0.35μm 3.3V 4Kx16 x 683x1080 YM4K16W35L3AC1_A11
MTP Nuvoton LG 0.35μm 3.3V 2Kx16 x 683x716 YM2K16W35L3AC1_A12
MTP Nuvoton LG 0.35μm 3.3V 1664x16 x 683x649 YM166416W35L3AC_A00
Process Name
CanSemi Logic/Analog/RF 0.18 um 1P6M Industry_Baseline_Generic 1.8V/3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Cansemi LG 0.18μm 3.3V 68x8 v 249x231 YRN6808G18L3AA2_A00
Process Name
CanSemi Logic/Analog/RF 0.18 um 1P6M Industry_Baseline_Generic Pure 3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Cansemi LG 0.18μm 3.3V 68x8 v 249x231 YRN6808G18L3AB2_A01
EEPROM Cansemi LG 0.18μm 3.3V 128x8 v 249x285 YRN12808G18L3AA2_A00
EEPROM Cansemi LG 0.18μm 3.3V 128x8 v 249x285 YRN12808G18L3AA2_A01
Process Name
CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP VIS BCD 0.15μm 5V 6Kx32 v 756x2100 YEN6K32V15B5BB1_Y00
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM VIS BCD 0.15μm 3.3V 128x8 v 900x448 YRN12808V15B3AB2_A00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v 900x448 YRN12808V15B3AC2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AC_D00
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AC_D01
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information VIS Mixed Mode 0.15μm 3.3V 2Kx32 v 1170x465 YEF2K32V15M3BA1_A11
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP VIS HV 0.3μm 3.3V 36x8 v 691x310 YMN3608V30H3AA1_A00
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP SKHynix BCD 0.18μm 5V 4Kx32 v 645x1373 YMN4K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 4Kx32 v 645x1442 YMN4K32X18B5BA1_A10
MTP Skhynix BCD 0.18μm 5V 4Kx32 v 645x1442 YEN4K32X18B5BA1_A11
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP HHGRACE LG 0.18μm 5V 2Kx16 x 322x608 YU2K16C18L5AB1_A00
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP SKHynix LG 0.11μm 3.3V 8Kx32 v 928x913 YMN8K32X11L3BA1_A00
MTP+Information SKHynix LG 0.11μm 3.3V 7Kx32 v 941x576 YMF7K32X11L3BA1_A01
MTP+Information Skhynix LG 0.11μm 3.3V 7Kx32 v 941x576 YMF7K32X11L3BA1_A00
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Key-foundry LG 0.13μm 3.3V 512x8 v 205x551 YEN51208N13L3AD2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v 205x383 YEN25608N13L3AA2_A02
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v 205x300 YEN12808N13L3AD2_A01
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information Key-foundry LG 0.18μm 5V 2Kx16 x 375x592 YNF2K16N18L5BC1_A00
MTP+Information Key-foundry LG 0.18μm 5V 32x16 x 375x280 YNF3216N18L5BA1_A00
MTP Key-foundry LG 0.18μm 5V 2Kx16 x 375x592 YNN2K16N18L5BB1_A10
Process Name
HP18EC30-0.18um 1.8V/6.0V, 8V, 12V, 16V, 20V, 24V, 30V(Vg=6.0V), 24/30V (Vg=18V) BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Key-foundry BCD 0.18μm 6V 64x8 x 311x671 YUN6408N18B6AB2_A00
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP MXIC LG 0.18μm 5V 2Kx16 x 375x594 YUN2K16M18L5AA1_A10
MTP+Information MXIC LG 0.18μm 5V 2Kx16 x 396x808 YUF2K16M18L5BA1_A10
MTP+Information MXIC LG 0.18μm 5V 2Kx16 x 375x594 YUF2K16M18L5BB1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 8Kx16 v 632x1352 YMG8K16M18L5BA1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx32 v 632x1352 YEG4K32M18L5BC1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx16 v 632x1013 YEG4K16M18L5BA1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v 632x1013 YEG2K32M18L5BB1_A14
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v 632x1013 YEG2K32M18L5BB1_A13
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v 731x1084 YEG2K32M18L5BA1_A11
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v 632x1013 YEG2K32M18L5BB1_A12
Process Name
L18B-0.18um CMOS SPDM/SPTM/SPQM BCD(5V/18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+EEPROM MXIC BCD 0.18μm 5V 8Kx16 v 632x1352 YEE8K16M18B5BA1_A04
Process Name
L18B1-0.18um CMOS SPDM/SPTM/SPQM BCD (5V/120V) (EPI)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
Trim MXIC BCD 0.18μm 5V 16x8 x 117x308 YVN1608M18B5NA4_A00
Trim MXIC BCD 0.18μm 5V 16x8 x 117x308 YVN1608M18B5NA3_A01
Trim MXIC BCD 0.18μm 5V 16x8 x 117x308 YVN1608M18B5NA3_A00
Process Name
LCDDr 110nm-N2 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP Nexchip HV 0.11μm 5V 3Kx8 x 292x1308 YUN3K08L11H5BC1_A04
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Nexchip HV 0.11μm 5V 512x8 x 485x300 YSN51208L11H5BA2_A00
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Nexchip LG 0.11μm 5V 256x8 v 357x349 YRN25608L11L5BC2_A10
MTP+Information Nexchip LG 0.11μm 5V 2Kx16 x 566x442 YNF2K16L11L5BA1_A11
MTP+Information Nexchip LG 0.11μm 5V 2Kx16 x 566x442 YNF2K16L11L5BA1_A10
MTP+Information Nexchip LG 0.11μm 5V 1Kx16 x 566x373 YNF1K16L11L5BA1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1260 YMG8K16L11L5BD1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1205 YMG8K16L11L5BA1_B10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1205 YMG8K16L11L5BA1_A12
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1205 YMG8K16L11L5BA1_A11
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v 566x1205 YMG8K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v 566x1262 YMG4K32L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v 566x1262 YMG4K32L11L5BE1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v 566x1205 YMG4K32L11L5BC1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v 566x940 YMG4K16L11L5BC1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v 566x887 YMG4K16L11L5BB1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v 566x887 YMG4K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4480x16 v 566x945 YMG448016L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 1Kx14 v 566x609 YMG1K14L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2368x14 v 566x772 YMG236814L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx16 v 566x728 YMG2K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v 566x1265 YMG16K08L11L5BB1_A01
FTP+Information Nexchip LG 0.11μm 5V 2Kx16 x 353x280 YGF2K16L11L5AA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v 574x1117 YEG16K08L11L5BA1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 1Kx16 v 566x628 YEG1K16L11L5BA1_A11
Process Name
Silterra D18V BCD 180nm Gen3 Tech
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM Silterra BCD 0.18μm 5V 128x2 x 266x242 YUN12802R18M5AA2_A10
EEPROM Silterra BCD 0.18μm 5V 128x8 v 477x298 YRN12808R18B5BA2_A11
EEPROM Silterra BCD 0.18μm 5V 128x8 v 477x298 YRN12808R18B5BA2_A10
MTP+Information Silterra BCD 0.18μm 5V 16Kx8 v 779x764 YMF16K08R18B5BA1_A11
MTP+Information Silterra BCD 0.18μm 5V 16Kx8 v 779x764 YMF16K08R18B5BA1_A10
Process Name
TPS65PM-65nm 1.2V/5V Mixed-Signal and Power Management Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
FTP+Information Towerjazz BCD 0.065μm 5V 2Kx32 v 977x679 YFF2K32O65B5BA1_A10
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
EEPROM tsmc BCD 0.18μm 5V 32x8 v 329x451 YEN3208T18B5AB2_C01
Process Name
TSMC 90 NM CMOS HIGH VOLTAGE MIXED SIGNAL BASED LOW POWER BCD PLUS DUAL GATE 1P6M SALICIDE CU_LOW K 1.5/1.8/4.5/5/6V/VG1.5/5V AND 1.5/1.8/4.5/5/6/12/16/29V/VG1.5/5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name SPEC
MTP+Information tsmc BCD 0.09μm 5V 8Kx32 v 965x1072 YMF8K32T09B5BA1_A00
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