億而得微電子股份有限公司

AEC-Q100 (Automotive)

Grade 1

Key Feature

[ 01 ]，12Kx16 bits ≈ 1.27mm2

Process Name

HG_0.18um_BCD_Generic Enhanced_1.8V5V(Vgs)_12V~120V(Vds)_1P6M (BD180GE0S) Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	HHGRACE	BCD	0.18μm	5V	12Kx16	x		YPN12K16C18B5AAG_A00

Key Feature

[ 02 ]，4Kx8 bits ≈ 0.16mm2

Process Name

LCDDr 110nm-N2 1.5V_6V_40V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Nexchip	HV	0.11μm	5V	4Kx8	x		YGF4K08L11H5BA1_A00

Key Feature

[ 03 ]，8Kx8 bits ≈ 0.415mm2

Process Name

90nm 90HV 1.35V_6.0V_32V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Rongsemi	HV	0.09μm	5V	8Kx8	x		YGF8K08RA90H5BA1_A00

Key Feature

[ 04 ]，4Kx16 bits ≈ 0.185mm2

Process Name

0.153um 5V CMOS EN Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Rongsemi	LG	0.153μm	5V	4Kx16	x		YGF4K16RA153L5AA1_A10

Key Feature

[ 05 ]，512x8 bits ≈ 0.09 mm2

Process Name

HG 40nm_Logic_Low Power_1.1V/2.5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	HHGRACE	LG	0.04μm	2.5V	512x8	x		YPN51208C04L2AA3_A10

Key Feature

[ 06 ]，512x8 bits ≈ 0.06 mm2

Process Name

90nm 90BSl 1.2v/3.3v Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	Rongsemi	CIS	0.09μm	3.3V	512x8	x		YPN51208RA90C3AA3_A10

Key Feature

[ 07 ]，8Kx8 bits ≈ 0.339 mm2

Process Name

90nm 90HV 1.35V_6.0V_32V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	Rongsemi	HV	0.09μm	6V	8Kx8	x		YPN8K08RA90H6AA3_A10

Key Feature

[ 08 ]，16Kx16 bits ≈ 0.853 mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Nexchip	LG	0.11μm	5V	16Kx16	v		YMG16K16L11L5BA1_A10

Key Feature

[ 09 ]，8Kx8 bits ≈ 0.372 mm2

Process Name

LCDDr 90nm-EP 1.32V_6V_40V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Nexchip	HV	0.09μm	5V	8Kx8	x		YGF8K08L90H5BB1_A00

Key Feature

[ 10 ]，128x8 bits ≈ 0.211 mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Nexchip	LG	0.11μm	5V	128x8	v		YRN12808L11L5BA2_A10

Key Feature

[ 11 ]，4kx16 bits ≈ 0.114 mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Nexchip	LG	0.11μm	5V	4Kx16	x		YGF4K16L11L5AI1_A10

Key Feature

[ 12 ]，8Kx8 bits ≈ 0.327 mm2

Process Name

LCDDr 90nm-MP 1.32V_6V_32V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	PSMC	HV	0.09μm	6V	8Kx8	x		YPN8K08P90H6AA3_A10

Key Feature

[ 13 ]，4kx16 bits ≈ 0.12 mm2

Process Name

CanSemi 95nm MIXS 1P5M 5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP	Cansemi	LG	0.095μm	5V	4Kx16	x		YGF4K16G95L5AA1_A00

Key Feature

[ 14 ]，128x8 bits ≈ 0.029 mm2

Process Name

HL110LP-110nm Logic CMOS Low Power Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP	SKHynix	LG	0.11μm	5V	128x8	x		YGN12808X11L5AB1_A00

Key Feature

[ 15 ]，128x8 bits ≈ 0.0297 mm2

Process Name

HL110LP-110nm Logic CMOS Low Power Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP	SKHynix	LG	0.11μm	3.3V	128x8	x		YGN12808X11L3AA1_A00

Key Feature

[ 16 ]，8Kx32 bits ≈ 0.77 mm2

Process Name

HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	HHGRACE	BCD	0.09μm	5V	8Kx32	v		YFF8K32C90B5BA1_A00

Key Feature

[ 17 ]，256x8 bits ≈ 0.25 mm2

Process Name

Power 150nm-BDES3 5V_40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Nexchip	BCD	0.15μm	5V	256x8	v		YRN25608L15B5AA2_A10

Key Feature

[ 18 ]，128x8 bits ≈ 0.065 mm2

Process Name

LOGIC 150nm-FPS 3.3V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Nexchip	LG	0.15μm	3.3V	128x8	v		YRN12808L15L3AA2_A00

Key Feature

[ 19 ]，256x8 bits ≈ 0.15 mm2

Process Name

HW_90nm_BCD_Low Power_1.5V5V(Vgs),5V9V12V24V(Vds)_1P7M Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	HHGRACE	BCD	0.09μm	5V	256x8	v		YRN25608C90B5BA2_A10

Key Feature

[ 20 ]，8Kx32 bits ≈ 1.03 mm2

Process Name

0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	SMIC	BCD	0.18μm	5V	8Kx32	v		YMF8K32S18B5BC1_A10

Key Feature

[ 21 ]，16Kx32 bits ≈ 0.910 mm2 (With ECC)，16Kx32 bits ≈ 0.795 mm2 (Without ECC)

Process Name

90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	SMIC	BCD	0.09μm	5V	16Kx32	v		YFF16K32S90B5BA1_A10

Key Feature

[ 22 ]，2.5V for Write Voltage，16Kx32 bits ≈ 0.990 mm2 (With ECC)，16Kx32 bits ≈ 0.860 mm2 (Without ECC)

Process Name

90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	SMIC	BCD	0.09μm	5V	16Kx32	v		YFF16K32S90B5BB1_A10