Key Feature
[ 01 ],8Kx8 bits ≈ 0.372 mm2
Process Name
LCDDr 90nm-EP 1.32V_6V_40V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information Nexchip HV 0.09μm 5V 8Kx8 x YGF8K08L90H5BB1_A00
Key Feature
[ 02 ],128x8 bits ≈ 0.211 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Nexchip LG 0.11μm 5V 128x8 v YRN12808L11L5BA2_A10
Key Feature
[ 03 ],4kx16 bits ≈ 0.114 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AI1_A10
Key Feature
[ 04 ],8Kx8 bits ≈ 0.327 mm2
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP PSMC HV 0.09μm 6V 8Kx8 x YPN8K08P90H6AA3_A10
Key Feature
[ 05 ],4kx16 bits ≈ 0.12 mm2
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP Cansemi LG 0.095μm 5V 4Kx16 x YGF4K16G95L5AA1_A00
Key Feature
[ 06 ],128x8 bits ≈ 0.029 mm2
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP SKHynix LG 0.11μm 5V 128x8 x YGN12808X11L5AB1_A00
Key Feature
[ 07 ],128x8 bits ≈ 0.0297 mm2
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP SKHynix LG 0.11μm 3.3V 128x8 x YGN12808X11L3AA1_A00
Key Feature
[ 08 ],8Kx32 bits ≈ 0.77 mm2
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information HHGRACE BCD 0.09μm 5V 8Kx32 v YMF8K32C90B5BA1_A00
Key Feature
[ 09 ],4kx16 bits ≈ 0.21mm2
Process Name
DTJX 0.18um 5V CMOS Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information DTJX LG 0.18μm 5V 4kx16 x YNF4K16DA18L5AA1_A10
Key Feature
[ 10 ],16x8 bits ≈ 0.03 mm2
Process Name
SHARP 0.18um BCD Process 1P6M 1.8V/5V/18V/24V/30V/40V/60V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP Sharp BCD 0.18μm 5V 16x8 x YPN1608J18B5NA2_A00
Key Feature
[ 11 ],256x8 bits ≈ 0.25 mm2
Process Name
Power 150nm-BDES3 5V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Nexchip BCD 0.15μm 5V 256x8 v YRN25608L15B5AA2_A10
Key Feature
[ 12 ],128x8 bits ≈ 0.065 mm2
Process Name
LOGIC 150nm-FPS 3.3V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Nexchip LG 0.15μm 3.3V 128x8 v YRN12808L15L3AA2_A00
Key Feature
[ 13 ],256x8 bits ≈ 0.15 mm2
Process Name
HW_90nm_BCD_Low Power_1.5V5V(Vgs),5V9V12V24V(Vds)_1P7M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM HHGRACE BCD 0.09μm 5V 256x8 v YRN25608C90B5BA2_A10
Key Feature
[ 14 ],8Kx32 bits ≈ 1.03 mm2
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BC1_A10
Key Feature
[ 15 ],16Kx32 bits ≈ 0.910 mm2 (With ECC),16Kx32 bits ≈ 0.795 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information SMIC BCD 0.09μm 5V 16Kx32 v YFF16K32S90B5BA1_A10
Key Feature
[ 16 ],2.5V for Write Voltage,16Kx32 bits ≈ 0.990 mm2 (With ECC),16Kx32 bits ≈ 0.860 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information SMIC BCD 0.09μm 5V 16Kx32 v YFF16K32S90B5BB1_A10
Key Feature
[ 17 ],512x8 bits ≈ 0.41 mm2
Process Name
BCD1370-0.13um 1.5V/5V/70V BCD Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Samsung BCD 0.13μm 5V 512x8 v YEN51208E13B5AA2_A11
Key Feature
[ 18 ],256x8 bits ≈ 0.15 mm2
Process Name
HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM HHGRACE LG 0.095μm 5V 256x8 v YRN25608C95L5AA2_A10
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