Key Feature
[ 01 ],8K32 bits ≈ 1.03 mm2
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information SMIC BCD 0.18μm 5V 8K32 v YMF8K32S18B5BC1_A10
Key Feature
[ 02 ],128*8 bits ≈ 0.036 mm2
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AA1_A10
Key Feature
[ 03 ],16K32 bits ≈ 0.910 mm2 (With ECC),16K32 bits ≈ 0.795 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information SMIC BCD 0.09μm 5V 16K32 v YFF16K32S90B5BA1_A10
Key Feature
[ 04 ],2.5V for Write Voltage,16K32 bits ≈ 0.990 mm2 (With ECC),16K32 bits ≈ 0.860 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information SMIC BCD 0.09μm 5V 16K32 v YFF16K32S90B5BB1_A10
Key Feature
[ 05 ],8K32 bits ≈ 1.73 mm2 (With RPO, with ECC),8K32 bits ≈ 1.27 mm2 (Without RPO, without ECC)
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information SMIC BCD 0.18μm 5V 8K32 v YMF8K32S18B5BA1_A10
Key Feature
[ 06 ],256x8 bits ≈ 0.28 mm2
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AA2_A00
Key Feature
[ 07 ],64x16 bits ≈ 0.20 mm2 With ECC
Process Name
0.18um MS and BCD Salicide 1.8V/5V/10V/12V/20V/35V/40V Automotive Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM SMIC BCD 0.18μm 5V 64x16 v YRN6416S18B5AA2_A00
Key Feature
[ 08 ],4K32 bits ≈ 0.52 mm2
Process Name
CanSemi Logic/ 0.18 um 1P6M Industry_Baseline_Generic 5.0V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information Cansemi LG 0.18μm 5V 4K32 v YMF4K32G18L5BA1_A00
Key Feature
[ 09 ],256x8 bits ≈ 0.14 mm2
Process Name
CanSemi Logic/ 0.18 um 1P6M Industry_Baseline_Generic 5.0V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Cansemi LG 0.18μm 5V 256x8 v YRN25608G18L5BA2_A00
Key Feature
[ 10 ],4x8 bits ≈ 0.016 mm2
Process Name
CanSemi Logic/ 0.18 um 1P6M Industry_Baseline_Generic 5.0V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
Trim Cansemi LG 0.18μm 5V 4x8 x YPN0408G18B5NA3_A10
Key Feature
[ 11 ],8K32 bits ≈ 1.17 mm2 (With RPO),8K32 bits ≈ 0.97 mm2  (Without RPO)
Process Name
Gtasemi 0.15 HV40V BCD process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information GTA Semi BCD 0.15μm 5V 8K32 v YMF8K32GA15B5AA1_A10
Key Feature
[ 12 ],8K32 bits ≈ 1.11 mm2 (With RPO),8K32 bits ≈ 0.88 mm2 (Without RPO)
Process Name
HW_90nm_BCD_Low Power_1.5V5V(Vgs),5V9V12V24V(Vds)_1P7M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information HHGRACE BCD 0.09μm 5V 8K32 v YMF8K32C90B5AA1_A01
Key Feature
[ 13 ],512x8 bits ≈ 0.41 mm2
Process Name
BCD1370-0.13um 1.5V/5V/70V BCD Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Samsung BCD 0.13μm 5V 512x8 v YEN51208E13B5AA2_A11
Key Feature
[ 14 ],8K32 bits ≈ 1.18 mm2 (With RPO),8K32 bits ≈ 0.96 mm2 (Without RPO)
Process Name
1530BD13SA-BIPOLAR CMOS DMOS 0.13um 1P8M 1.5V/5.0V/30V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information DB HiTek BCD 0.13μm 5V 8K32 v YMF8K32D13B5AA1_A10
Key Feature
[ 15 ],16K32 bits ≈ 1.6 mm2 (With ECC),16K32 bits ≈ 1.4 mm2 (Without ECC),8K32 bits ≈ 1.03 mm2 (With ECC),8K32 bits ≈ 0.89 mm2 (Without ECC)
Process Name
TSMC 90 NM CMOS HIGH VOLTAGE MIXED SIGNAL BASED LOW POWER BCD PLUS DUAL GATE 1P6M SALICIDE CU_LOW K 1.5/1.8/4.5/5/6V/VG1.5/5V AND 1.5/1.8/4.5/5/6/12/16/29V/VG1.5/5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information tsmc BCD 0.09μm 5V 8K32 v YMF8K32T09B5BA1_A00
Key Feature
[ 16 ],16K32 bits ≈ 1.40 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information Nexchip LG 0.11μm 5V 16K32 v YMF16K32L11L5BA1_A10
Key Feature
[ 17 ],4K16 bits ≈ 0.16 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AA1_A10
Key Feature
[ 18 ],256*8 bits ≈ 0.15 mm2
Process Name
HG_95nm_Embedded SONOS Based EEPROM_Low Power_5V_1P5M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM HHGRACE LG 0.095μm 5V 256x8 v YRN25608C95L5AA2_A10
Key Feature
[ 19 ],4K32 bits ≈ 0.38 mm2
Process Name
HG_95nm_Embedded SONOS Based EEPROM_Low Power_5V_1P5M Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information HHGRACE LG 0.095μm 5V 4Kx32 v YFF4K32C95L5BA1_A10
Key Feature
[ 20 ],16K08 bits ≈ 0.38 mm2
Process Name
40nm High Voltage 1.1V/8V/32V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP SMIC HV 0.04μm 8V 16K08 x YPN16K08S40H8AA2_A10
Key Feature
[ 21 ],16K08 bits ≈ 0.38 mm2
Process Name
LCDDr 55nm-HV 1.2V_6V_32V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP Nexchip HV 0.055μm 6V 16K08 x YPN16K08L55H6AA3_A10
Key Feature
[ 22 ],16K08 bits ≈ 0.38 mm2
Process Name
CL055HV-0.055UM LOGIC SALICIDE HIGH-VOLTAGE (1.2V/8V/32V) PROCESS
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP HLMC HV 0.055μm 8V 16K08 x YPN16K08Q55H8AA3_A10
Key Feature
[ 23 ],4K32 bits ≈ 0.388 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
FTP+Information Nexchip LG 0.11μm 5V 4Kx32 v YFF4K32L11L5BA1_A10
Key Feature
[ 24 ],256*8 bits ≈ 0.125 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BD2_A10
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