亿而得微电子股份有限公司

Key Feature

[ 01 ]，1Kx8 bits ≈ 0.078 mm2

Process Name

N1(NEW) CIS 90nm-BCIS 1.2V_3.3V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
Anti-fuse OTP+Information	Nexchip	CIS	0.09μm	3.3V	1Kx8	x		YBF1K08L90C3AA3_A10

Key Feature

[ 02 ]，1Kx8 bits ≈ 0.022 mm2

Process Name

N1(NEW) CIS 90nm-BCIS 1.2V_3.3V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
YFUSE OTP+Information	Nexchip	CIS	0.09μm	3.3V	1Kx8	x		YXF1K08L90C3AA4_A10

Key Feature

[ 03 ]，4Kx8 bits ≈ 0.017 mm2

Process Name

28nm Mixed Mode High Performance Computing Plus 1.8V_2.5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
YFUSE OTP+Information	XLMEC	Mixed Mode	0.028μm	2.5 OD3.3V	4Kx8	x		YXF4K08XA028M2AA4_A10

Key Feature

[ 04 ]，8Kx8 bits ≈ 0.043 mm2

Process Name

40nm High Voltage 8V_16V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
YFUSE OTP+Information	XLMEC	HV	0.04μm	8V UD 5.5V	8Kx8	x		YXF8K08XA04H8AA4_A10

Key Feature

[ 05 ]，16Kx16 bits ≈ 0.585mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Nexchip	LG	0.11μm	5V	16Kx16	v		YMG16K16L11L5BC1_A10

Key Feature

[ 06 ]，16Kx16 bits ≈ 0.739mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Nexchip	LG	0.11μm	5V	16Kx16	v		YMG16K16L11L5BD1_A10

Key Feature

[ 07 ]

Process Name

90nm LP 1.5V_5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP++Information	Runpeng	LG	0.09μm	5V	4Kx16	x		YPF4K16RB90L5AA1_A10

Key Feature

[ 08 ]，8Kx32 bits ≈ 0.826 mm2

Process Name

90nm_BCD_Low Power G3_1.5V/5V(Vgs),5V/9V/12V/24V/30V(Vds)_FAB7 Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	HHGRACE	BCD	0.09μm	5V	8Kx32	v		YMF8K32C90B5BB1_A10

Key Feature

[ 09 ]，8Kx8 bits ≈ 0.415mm2

Process Name

90nm 90HV 1.35V_6.0V_32V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Rongsemi	HV	0.09μm	5V	8Kx8	x		YGF8K08RA90H5BA1_A00

Key Feature

[ 10 ]，512x8 bits ≈ 0.06 mm2

Process Name

90nm 90BSI 1.2V_3.3V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	Rongsemi	CIS	0.09μm	3.3V	512x8	x		YPN51208RA90C3AA3_A10

Key Feature

[ 11 ]，8Kx8 bits ≈ 0.339 mm2

Process Name

90nm 90HV 1.35V_6.0V_32V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	Rongsemi	HV	0.09μm	6V	8Kx8	x		YPN8K08RA90H6AA3_A10

Key Feature

[ 12 ]，8Kx8 bits ≈ 0.372 mm2

Process Name

LCDDr 90nm-EP 1.32V_6V_40V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	Nexchip	HV	0.09μm	5V	8Kx8	x		YGF8K08L90H5BB1_A00

Key Feature

[ 13 ]，128x8 bits ≈ 0.211 mm2

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Nexchip	LG	0.11μm	5V	128x8	v		YRN12808L11L5BA2_A10

Key Feature

[ 14 ]，4kx16 bits ≈ 0.12 mm2

Process Name

CanSemi 95nm MIXS 1P5M 5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP	Cansemi	LG	0.095μm	5V	4Kx16	x		YGF4K16G95L5AA1_A00

Key Feature

[ 15 ]，8Kx32 bits ≈ 1.03 mm2

Process Name

0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	SMIC	BCD	0.18μm	5V	8Kx32	v		YMF8K32S18B5BC1_A10

Key Feature

[ 16 ]，16Kx32 bits ≈ 0.910 mm2 (With ECC)，16Kx32 bits ≈ 0.795 mm2 (Without ECC)

Process Name

90nm BCD 1.5V/5V/6V/9V/12V/16V/20V/24V/30V/40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	SMIC	BCD	0.09μm	5V	16Kx32	v		YFF16K32S90B5BA1_A10

Key Feature

[ 17 ]，2.5V for Write Voltage，16Kx32 bits ≈ 0.990 mm2 (With ECC)，16Kx32 bits ≈ 0.860 mm2 (Without ECC)

Process Name

90nm BCD 1.5V/5V/6V/9V/12V/16V/20V/24V/30V/40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP+Information	SMIC	BCD	0.09μm	5V	16Kx32	v		YFF16K32S90B5BB1_A10