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AEC-Q100 (Automotive)
Grade 1
Key Feature
[ 01 ]，2Kx8 bits ≈ 0.379 mm2
Process Name
HL13GW-0.13um 1.5V_1.8V_3.3V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP | SK keyfoundry | LG | 0.13μm | 3.3V | 2Kx8 | v | YMN2K08N13L3ABG_A00 |
Key Feature
[ 02 ]，8Kx32 bits ≈ 0.721 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 8Kx32 | v | YMG8K32L11L5BB1_A10 |
Key Feature
[ 03 ]，16Kx16 bits ≈ 0.721 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 16Kx16 | v | YMG16K16L11L5BF1_A10 |
Key Feature
[ 04 ]，16Kx8 bits ≈ 0.564mm2
Process Name
P12 LCDDr 80nm-SA(Al) 1.2V_6V_42V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | PSMC | HV | 0.08μm | 6V | 16Kx8 | x | YGF16K08P80H6BA1_A00 |
Key Feature
[ 05 ]，2Kx14 bits ≈ 0.050 mm2
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| YFUSE OTP+Information | Cansemi | LG | 0.095μm | 5V | 2Kx14 | x | YXF2K14G95L5AA1_A10 |
Key Feature
[ 06 ]，8Kx8 bits ≈ 0.078 mm2
Process Name
55HV Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| YFUSE OTP+Information | BEMC | HV | 0.055μm | 6V | 8Kx8 | x | YXF8K08BA55H6AA4_A10 |
Key Feature
[ 07 ]，8Kx32 bits ≈ 0.877 mm2
Process Name
90nm_BCD_Low Power G3_1.5V/5V(Vgs),5V/9V/12V/24V/30V(Vds)_FAB7 Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YFF8K32C90B5AB1_A00 |
Key Feature
[ 08 ]，2Kx8 bits ≈ 0.369 mm2
Process Name
HL13GW-0.13um 1.5V_1.8V_3.3V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP | SK keyfoundry | LG | 0.13μm | 3.3V | 2Kx8 | v | YMN2K08N13L3AC2_A00 |
Key Feature
[ 09 ]，1Kx8 bits ≈ 0.078 mm2
Process Name
N1(NEW) CIS 90nm-BCIS 1.2V_3.3V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| Anti-fuse OTP+Information | Nexchip | CIS | 0.09μm | 3.3V | 1Kx8 | x | YBF1K08L90C3AA3_A10 |
Key Feature
[ 10 ]，1Kx8 bits ≈ 0.022 mm2
Process Name
N1(NEW) CIS 90nm-BCIS 1.2V_3.3V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| YFUSE OTP+Information | Nexchip | CIS | 0.09μm | 3.3V | 1Kx8 | x | YXF1K08L90C3AA4_A10 |
Key Feature
[ 11 ]，4Kx8 bits ≈ 0.017 mm2
Process Name
28nm Mixed Mode High Performance Computing Plus 1.8V_2.5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| YFUSE OTP+Information | XLMEC | Mixed Mode | 0.028μm | 2.5 OD3.3V | 4Kx8 | x | YXF4K08XA028M2AA4_A10 |
Key Feature
[ 12 ]，8Kx8 bits ≈ 0.043 mm2
Process Name
40nm High Voltage 8V_16V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| YFUSE OTP+Information | XLMEC | HV | 0.04μm | 8V UD 5.5V | 8Kx8 | x | YXF8K08XA04H8AA4_A10 |
Key Feature
[ 13 ]
Process Name
90nm LP 1.5V_5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| OTP++Information | Runpeng | LG | 0.09μm | 5V | 4Kx16 | x | YPF4K16RB90L5AA1_A10 |
Key Feature
[ 14 ]，8Kx8 bits ≈ 0.415mm2
Process Name
90nm 90HV 1.35V_6.0V_32V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Rongsemi | HV | 0.09μm | 5V | 8Kx8 | x | YGF8K08RA90H5BA1_A00 |
Key Feature
[ 15 ]，512x8 bits ≈ 0.06 mm2
Process Name
90nm 90BSI 1.2V_3.3V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| OTP | Rongsemi | CIS | 0.09μm | 3.3V | 512x8 | x | YPN51208RA90C3AA3_A10 |
Key Feature
[ 16 ]，8Kx8 bits ≈ 0.339 mm2
Process Name
90nm 90HV 1.35V_6.0V_32V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| OTP | Rongsemi | HV | 0.09μm | 6V | 8Kx8 | x | YPN8K08RA90H6AA3_A10 |
Key Feature
[ 17 ]，16Kx32 bits ≈ 0.910 mm2 (With ECC)，16Kx32 bits ≈ 0.795 mm2 (Without ECC)
Process Name
90nm BCD 1.5V/5V/6V/9V/12V/16V/20V/24V/30V/40V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | SMIC | BCD | 0.09μm | 5V | 16Kx32 | v | YFF16K32S90B5BA1_A10 |
Key Feature
[ 18 ]，2.5V for Write Voltage，16Kx32 bits ≈ 0.990 mm2 (With ECC)，16Kx32 bits ≈ 0.860 mm2 (Without ECC)
Process Name
90nm BCD 1.5V/5V/6V/9V/12V/16V/20V/24V/30V/40V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | SMIC | BCD | 0.09μm | 5V | 16Kx32 | v | YFF16K32S90B5BB1_A10 |