- 首页
- 产品专区
Key Feature
[ 01 ]，16Kx16 bits ≈ 0.853 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 16Kx16 | v | YMG16K16L11L5BA1_A10 |
Key Feature
[ 02 ]，8Kx8 bits ≈ 0.372 mm2
Process Name
LCDDr 90nm-EP 1.32V_6V_40V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Nexchip | HV | 0.09μm | 5V | 8Kx8 | x | YGF8K08L90H5BB1_A00 |
Key Feature
[ 03 ]，128x8 bits ≈ 0.211 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| EEPROM | Nexchip | LG | 0.11μm | 5V | 128x8 | v | YRN12808L11L5BA2_A10 |
Key Feature
[ 04 ]，4kx16 bits ≈ 0.114 mm2
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | x | YGF4K16L11L5AI1_A10 |
Key Feature
[ 05 ]，8Kx8 bits ≈ 0.327 mm2
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| OTP | PSMC | HV | 0.09μm | 6V | 8Kx8 | x | YPN8K08P90H6AA3_A10 |
Key Feature
[ 06 ]，4kx16 bits ≈ 0.12 mm2
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | Cansemi | LG | 0.095μm | 5V | 4Kx16 | x | YGF4K16G95L5AA1_A00 |
Key Feature
[ 07 ]，128x8 bits ≈ 0.029 mm2
Process Name
HL110LP-110nm Logic CMOS Low Power Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | SKHynix | LG | 0.11μm | 5V | 128x8 | x | YGN12808X11L5AB1_A00 |
Key Feature
[ 08 ]，128x8 bits ≈ 0.0297 mm2
Process Name
HL110LP-110nm Logic CMOS Low Power Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | SKHynix | LG | 0.11μm | 3.3V | 128x8 | x | YGN12808X11L3AA1_A00 |
Key Feature
[ 09 ]，8Kx32 bits ≈ 0.77 mm2
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+Information | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YMF8K32C90B5BA1_A00 |
Key Feature
[ 10 ]，256x8 bits ≈ 0.25 mm2
Process Name
Power 150nm-BDES3 5V_40V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| EEPROM | Nexchip | BCD | 0.15μm | 5V | 256x8 | v | YRN25608L15B5AA2_A10 |
Key Feature
[ 11 ]，128x8 bits ≈ 0.065 mm2
Process Name
LOGIC 150nm-FPS 3.3V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| EEPROM | Nexchip | LG | 0.15μm | 3.3V | 128x8 | v | YRN12808L15L3AA2_A00 |
Key Feature
[ 12 ]，256x8 bits ≈ 0.15 mm2
Process Name
HW_90nm_BCD_Low Power_1.5V5V(Vgs),5V9V12V24V(Vds)_1P7M Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| EEPROM | HHGRACE | BCD | 0.09μm | 5V | 256x8 | v | YRN25608C90B5BA2_A10 |
Key Feature
[ 13 ]，8Kx32 bits ≈ 1.03 mm2
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+Information | SMIC | BCD | 0.18μm | 5V | 8Kx32 | v | YMF8K32S18B5BC1_A10 |
Key Feature
[ 14 ]，16Kx32 bits ≈ 0.910 mm2 (With ECC)，16Kx32 bits ≈ 0.795 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | SMIC | BCD | 0.09μm | 5V | 16Kx32 | v | YFF16K32S90B5BA1_A10 |
Key Feature
[ 15 ]，2.5V for Write Voltage，16Kx32 bits ≈ 0.990 mm2 (With ECC)，16Kx32 bits ≈ 0.860 mm2 (Without ECC)
Process Name
90nm BCD 1.5V_5V_6V_9V_12V_16V_20V_24V_30V_35V_40V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | SMIC | BCD | 0.09μm | 5V | 16Kx32 | v | YFF16K32S90B5BB1_A10 |