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Foundry
Process Type
Process Node
IO device Type
Density
Charge Pump
AEC-Q100 (Automotive)
IP Name
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Key Feature
Customized IP
Process Name
0.153um 5V CMOS EN Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP+Information Rongsemi LG 0.153μm 5V 16Kx8 v YFF16K08RA153L5BA1_A11
Key Feature
Customized IP
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Globalfoundries LG 0.15μm 3.3V 16Kx8 v YMF16K08F15L3BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 2Kx16 v YEG2K16F15L5BA1_B11
MTP+Information Globalfoundries LG 0.15μm 3.3V 8Kx16 v YEF8K16F15L3BA1_B11
Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx16 v YMG8K16F18B5BA1_A10
MTP+Information Globalfoundries BCD 0.18μm 5V 24Kx8 v YMF24K08F18B5BA1_A10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YMG16K08F18B5BA1_A00
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BC1_B00
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx32 v YEF2K32F18L5BA1_B10
Key Feature
Customized IP
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B02
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B01
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_A00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AB2_A01
Key Feature
Customized IP
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AB2_Y00
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AA2_A02
Key Feature
Customized IP
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.11μm 3.3V 512x8 x YUN51208L11H5BC2_A00
FTP Nexchip HV 0.11μm 1.5V 512x8 x YGN51208L11H5BA2_A00
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Nexchip LG 0.11μm 5V 6Kx16 v YFF6K16L11L5BA1_A11
Key Feature
Customized IP
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BD1_A00
Process Name
0.153um 5V CMOS EN Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Rongsemi LG 0.153μm 5V 8Kx16 v YFF8K16RA153L5BA1_A01
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A11
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A00
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BA1_A01
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BA1_A00
MTP+Information Globalfoundries LG 0.15μm 5V 6Kx16 v YMG6K16F15L5BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx8 v YMG8K08F15L5BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx32 v YMG4K32F15L5AA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BE1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BB1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BC1_A10
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMF8K16F15L5BB1_A01
MTP+EEPROM+Information Globalfoundries LG 0.15μm 3.3V 16Kx16 v YMG16K16F15L3BA1_A00
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Globalfoundries BCD 0.18μm 5V 8Kx8 v YMF8K08F18B5BA1_A00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 5Kx32 v YEG5K32F18B5BA1_A00
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v YEG16K08F18L3BB1_B00
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx32 v YEF2K32F18L5BB1_A01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BA1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BP1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEG4K16F18L3BA1_B11
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx32 v YEF4K32F18L5BB1_A01
MTP+EEPROM Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEE4K16F18L3BA1_B10
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx32 v YEF1K32F18L5BA1_A11
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 1Kx16 v YEG1K16F18L3BA1_A10
Process Name
90nm_BCD_Low Power G2_1.5V/5V(Vgs),5V/9V/12V/24V/30V/40V(Vds) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP HHGRACE BCD 0.09μm 5V 8Kx32 v YFN8K32C90B5BB1_A00
FTP HHGRACE BCD 0.09μm 5V 8Kx32 v YFN8K32C90B5BA1_A00
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Cansemi LG 0.095μm 5V 1Kx14 x YGF1K14G95L5AA1_A10
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AC2_A00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AB2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_D01
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_D00
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS Mixed Mode 0.15μm 3.3V 2Kx32 v YEF2K32V15M3BA1_A11
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.3μm 3.3V 36x8 v YMN3608V30H3AA1_A00
Process Name
HP18EC30-0.18um 1.8V/6.0V, 8V, 12V, 16V, 20V, 24V, 30V(Vg=6.0V), 24/30V (Vg=18V) BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP SK keyfoundry BCD 0.18μm 6V 64x8 x YUN6408N18B6AB2_A00
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information PSMC HV 0.09μm 5V 4Kx8 x YGF4K08P90H5BB1_A10
Process Name
LOGIC 110nm-G 1.5V_3.3V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Nexchip LG 0.11μm 3.3V 256x8 v YRN25608L11L3AB2_A00
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BI2_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5AJ1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5AI1_A01
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 v YFF4K16L11L5BA1_A11
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_C01
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