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Process Type
Process Node
IO device Type
Density
Charge Pump
AEC-Q100 (Automotive)
IP Name
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Key Feature
Customized IP
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Globalfoundries LG 0.15μm 3.3V 16Kx8 v YMF16K08F15L3BA1_A00
MTP+Information Globalfoundries LG 0.15μm 3.3V 8Kx16 v YEF8K16F15L3BA1_B11
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 2Kx16 v YEG2K16F15L5BA1_B11
Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx16 v YMG8K16F18B5BA1_A10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YMG16K08F18B5BA1_A00
MTP+Information Globalfoundries BCD 0.18μm 5V 24Kx8 v YMF24K08F18B5BA1_A10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BB1_C00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v YEN16K08F18B5AA1_C00
MTP+Information Globalfoundries BCD 0.18μm 5V 2560x32 v YEF256032F18B5BA1_C10
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BE1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BC1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BP1_B12
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx32 v YEF2K32F18L5BA1_B10
Key Feature
Customized IP
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YEG8K32F18B5AA1_Y10
Key Feature
Customized IP
Process Name
0.18um LOGIC-E 6V/40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP PSMC HV 0.18μm 6V 256x8 v YRN25608P18H6AB2_A00
MTP PSMC HV 0.18μm 6V 64x8 v YEN6408P18H6AA2_A00
MTP PSMC HV 0.18μm 6V 32x8 v YE3208P18H6AC2_A02
Key Feature
Customized IP
Process Name
0.18um LOGIC-S 6V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP PSMC HV 0.18μm 6V 32x8 v YE3208P18H6AC2_A00
MTP PSMC HV 0.18μm 6V 32x8 v YE3208P18H6AC2_A01
Key Feature
Customized IP
Process Name
0.35um 5V/8V/10V/18V/25V/40V 2P3M BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nuvoton BCD 0.35μm 5V 4x8 x YUO0408W35B5NA1_A02
Key Feature
Customized IP
Process Name
CanSemi Logic/0.18um 1P6M Industry_Baseline_Generic 5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Cansemi LG 0.18μm 5V 4x8 x YPN0408G18B5NA3_A10
FTP+Information Cansemi LG 0.18μm 5V 4Kx32 v YFF4K32G18L5BC1_A00
Key Feature
Customized IP
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_A00
Key Feature
Customized IP
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B02
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_B01
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AD2_A00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AB2_A01
Key Feature
Customized IP
Process Name
CB025RL20008-0.25UM, CMOS BCD Low Ron LDMOS MiM, 1P5M, SALICIDE, 2.5/5V(Vgs=2.5/5V, Vds=12/18/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.25μm 5V 32x8 v YE3208V25B5AB2_A01
Key Feature
Customized IP
Process Name
CV011MS00005-0.11UM High Voltage 1P6M SALICIDE 1.5/7/32V(Vgs=1.5/7/32V, Vds=1.5/7/32V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_C01
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_C00
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_A00
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_B01
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_A01
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_B00
Key Feature
Customized IP
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix BCD 0.18μm 5V 8Kx32 v YMN8K32X18B5AA1_Y10
Key Feature
Customized IP
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP HHGRACE LG 0.18μm 5V 1Kx14 x YU1K14C18L5AC1_A00
MTP HHGRACE LG 0.18μm 5V 4Kx16 x YU4K16C18L5AC1_A00
Key Feature
Customized IP
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AB2_Y00
MTP Key-foundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AA2_A02
Key Feature
Customized IP
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_Y01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YEN25608N16L3AB2_Y00_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YEN25608N16L3AB2_A01_110
MTP SK keyfoundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_Y00_110
MTP SK keyfoundry LG 0.16μm 3.3V 512x8 v YE51208N18L3AD2_A02
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AD2_A02_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_A02
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_B01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_Y00_110
Key Feature
Customized IP
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information SK keyfoundry LG 0.18μm 5V 4Kx14 x YUF4K14N18L5AD1_A10
MTP SK keyfoundry LG 0.18μm 5V 4Kx16 x YNN4K16N18L5BB1_A10
MTP SK keyfoundry LG 0.18μm 5V 4Kx16 x YNN4K16N18L5BA1_A00
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YNF2K16N18L5BC1_A10
Key Feature
Customized IP
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information HHGRACE BCD 0.09μm 5V 8Kx32 v YMF8K32C90B5AB1_A01
Key Feature
Customized IP
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx32 v YMG4K32M18L5BA1_A10_105
Key Feature
Customized IP
Process Name
L50G-0.5um CMOS DPTM POWER CDMOS (5V/24V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM+Information MXIC LG 0.5μm 5V 64x8 v YEF6408M55L5AA1_A00
Key Feature
Customized IP
Process Name
L50W-MXIC 0.5um CMOS DPTM POWER CMOS (5V12V) (TRIPLE WELL)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM+Information MXIC LG 0.5μm 5V 64x8 v YEF6408M55L5AB1_A10
Key Feature
Customized IP
Process Name
LCDD 0.15um-S 3.3V_18V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP PSMC LG 0.15μm 3.3V 512x8 x YU51208P15L3AA_A01
MTP+Information PSMC LG 0.15μm 3.3V 128x8 v YF12808P15L3AB_B00
Key Feature
Customized IP
Process Name
LCDDr 110nm-N2 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nexchip HV 0.11μm 5V 2Kx8 x YUN2K08L11H5BA1_A00
OTP Nexchip HV 0.11μm 5V 3Kx8 x YUN3K08L11H5BC1_A05
OTP Nexchip HV 0.11μm 5V 2Kx8 x YGN2K08L11H5BB1_A00
Key Feature
Customized IP
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A04
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A02
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP 1.5V/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx8 v YEG8K08L11L5BA1_A13
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BC2_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_C10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BJ1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BH1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BE1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BC1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx32 v YMG2K32L11L5BB1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx16 v YMG2K16L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A04
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A03
MTP+Information Nexchip LG 0.11μm 5V 16Kx8 v YMF16K08L11L5BB1_A00
FTP+Information Nexchip LG 0.11μm 5V 1Kx14 x YGF1K14L11L5AA1_A10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AL1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YEG8K16L11L5BC1_A10
Key Feature
Customized IP
Process Name
Silergy 0.162 um Mixed Mode 5V 1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP UMC Mixed Mode 0.16μm 5V 128x8 v YRN12808U16M5AA2_Y00
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AA2_B11
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AA2_A10
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AA2_A11
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YRN12808S16M5AA2_B10
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YEN12808S16M5AA2_A02
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YEN12808S16M5AA2_A01
MTP SMIC Mixed Mode 0.16μm 5V 128x8 v YEN12808S16M5AA2_A00
Key Feature
Customized IP
Process Name
Silterra D18V BCD 180nm Gen3 Tech
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BA2_A11
Key Feature
Customized IP
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BD1_A00
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BC1_A00
MTP+Information tsmc BCD 0.18μm 5V 4Kx32 v YMF4K32T18B5BA1_A00
Key Feature
Customized IP
Process Name
UMC 0.18 um BCD 1.8 V/5.0 V 1P6M High Voltage P-Sub Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP UMC BCD 0.18μm 5V 32x8 x YU3208U18B5AA_A03
FTP UMC BCD 0.18μm 5V 32x8 x YU3208U18B5AA_A05
FTP UMC BCD 0.18μm 5V 32x8 v YE3208U18B5AA_A02
Key Feature
Customized IP
Process Name
UMC 0.28 um Embedded High Voltage 3.3 V/9 V/18 V 2P5M P-Sub Polycide Gox65/435 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP UMC HV 0.28μm 3.3V 64x8 v YEN6408U28H3AA1_A00
Process Name
0.153um 1.8/5V BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Rongsemi BCD 0.153μm 5V 8Kx32 v YMF8K32RA15B5BB1_A00
Process Name
0.153um 5V CMOS EN Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Rongsemi LG 0.153μm 5V 16Kx8 v YMG16K08RA15L5BA1_A00
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BA1_A01
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BC1_A11
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5BA1_A00
MTP+Information Globalfoundries LG 0.15μm 5V 6Kx16 v YMG6K16F15L5BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx8 v YMG8K08F15L5BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BB1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 3.3V 16Kx16 v YMG16K16F15L3BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BE1_A10
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMF8K16F15L5BB1_A01
FTP+Information Globalfoundries LG 0.15μm 5V 1Kx16 x YGF1K16F15L5AA1_A10
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AA1_A10
Process Name
0.18 um 1.8V/6V/12-40V LDMOS dual-gate isolated BCDLite Gen2 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YFF8K32F18B5BA1_A00
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Globalfoundries BCD 0.18μm 5V 8Kx8 v YMF8K08F18B5BA1_A00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B11
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B12
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B13
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B14
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 5Kx32 v YEG5K32F18B5BA1_A00
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x YNF2K16F18L5BA1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BR1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BA1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEG4K16F18L3BA1_B11
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BP1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 1Kx16 v YEG1K16F18L3BA1_A10
MTP+EEPROM Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEE4K16F18L3BA1_B10
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx32 v YEF1K32F18L5BA1_A11
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx32 v YEF2K32F18L5BB1_A01
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx32 v YEF4K32F18L5BB1_A01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BP1_C12
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v YEG16K08F18L3BB1_B00
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YEG8K32F18B5BA1_A12
Process Name
0.18um MS and BCD Salicide 1.8_5V CMOS and 5-140V LDMOS Automotive Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 64x8 v YRN6408S18B5AA2_A00
MTP SMIC BCD 0.18μm 5V 64x8 v YRN6408S18B5AA2_A01
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AB2_A02
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AC2_A10
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AB2_A00
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AB2_A01
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BD1_A01
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BF1_A10
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BD1_A00
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BE1_A00
MTP+Information SMIC BCD 0.18μm 5V 4Kx32 v YMF4K32S18B5BB1_A10
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AE1_A10
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AD1_A00
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AB1_A01
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AC1_A00
Process Name
1.2V/5V Mixed-Signal and Power Management Process(POR1.7)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Tower BCD 0.065μm 5V 2Kx32 v YFF2K32O65B5BA1_A10
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AC2_A00
EEPROM VIS BCD 0.15μm 3.3V 128x8 v YRN12808V15B3AB2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_D00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_D01
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS Mixed Mode 0.15μm 3.3V 2Kx32 v YEF2K32V15M3BA1_A11
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.3μm 3.3V 36x8 v YMN3608V30H3AA1_A00
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix BCD 0.18μm 5V 4Kx32 v YMN4K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 4Kx32 v YMN4K32X18B5BA1_A10
MTP Skhynix BCD 0.18μm 5V 4Kx32 v YEN4K32X18B5BA1_A11
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP HHGRACE LG 0.18μm 5V 2Kx16 x YU2K16C18L5AB1_A00
Process Name
HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP+Information HHGRACE LG 0.095μm 5V 4Kx8 v YEG4K08C95L5BB1_A11
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix LG 0.11μm 3.3V 8Kx32 v YMN8K32X11L3BA1_A00
MTP+Information SKHynix LG 0.11μm 3.3V 7Kx32 v YMF7K32X11L3BA1_A01
MTP+Information Skhynix LG 0.11μm 3.3V 7Kx32 v YMF7K32X11L3BA1_A00
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.18μm 5V 2Kx16 x YNN2K16N18L5BB1_A10
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YNF2K16N18L5BC1_A00
MTP+Information SK keyfoundry LG 0.18μm 5V 32x16 x YNF3216N18L5BA1_A00
Process Name
HP18EC30-0.18um 1.8V/6.0V, 8V, 12V, 16V, 20V, 24V, 30V(Vg=6.0V), 24/30V (Vg=18V) BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Key-foundry BCD 0.18μm 6V 64x8 x YUN6408N18B6AB2_A00
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information HHGRACE BCD 0.09μm 5V 8Kx32 v YMF8K32C90B5AB1_A02
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information MXIC LG 0.18μm 5V 2Kx16 x YUF2K16M18L5BB1_A10
FTP+Information MXIC LG 0.18μm 5V 2Kx16 x YUF2K16M18L5BA1_A10
MTP MXIC LG 0.18μm 5V 2Kx16 x YUN2K16M18L5AA1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 8Kx16 v YMG8K16M18L5BA1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx32 v YEG4K32M18L5BC1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 4Kx16 v YEG4K16M18L5BA1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BB1_A14
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BB1_A13
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BB1_A12
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BA1_A11
Process Name
L18B-0.18um CMOS SPDM/SPTM/SPQM BCD(5V/18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM MXIC BCD 0.18μm 5V 64x8 v YRN6408M18B5AA2_A10
FTP MXIC BCD 0.18μm 5V 4Kx16 x YNN4K16M18B5BA1_A10
Process Name
L18B1-0.18um CMOS SPDM/SPTM/SPQM BCD (5V/120V) (EPI)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5NA3_A01
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5NA3_A02
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5NA4_A00
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5NA3_A03
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5NA3_A00
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A05
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A03
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A01
FTP Nexchip HV 0.11μm 5V 512x8 x YSN51208L11H5BA2_A00
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information PSMC HV 0.09μm 5V 4Kx8 x YGF4K08P90H5BB1_A10
Process Name
LOGIC 110nm-G 1.5V_3.3V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Nexchip LG 0.11μm 3.3V 256x8 v YRN25608L11L3AB2_A00
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YNF2K16L11L5BA1_A10
MTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YNF2K16L11L5BA1_A11
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A13
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_B10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BD1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BD1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A11
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A12
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BI1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5AD1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BB1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5AA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BE1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BC1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BC1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 1Kx14 v YMG1K14L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2368x14 v YMG236814L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx16 v YMG2K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx16 v YMG2K16L11L5BB1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4480x16 v YMG448016L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A01
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 v YFF4K16L11L5BA1_A10
FTP+Information Nexchip LG 0.11μm 5V 6Kx16 v YFF6K16L11L5BA1_A10
FTP+Information Nexchip LG 0.11μm 5V 8Kx16 v YFF8K16L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 1Kx16 v YEG1K16L11L5BA1_A11
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YEG16K08L11L5BA1_A00
Process Name
Silterra D18V BCD 180nm Gen3 Tech
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Silterra BCD 0.18μm 5V 4Kx16 x YNF4K16R18B5AA1_A00
FTP+Information Silterra BCD 0.18μm 5V 4Kx16 x YNF4K16R18B5AA1_A11
FTP+Information Silterra BCD 0.18μm 5V 2Kx14 x YNF2K14R18B5AA1_A10
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_C01
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