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Key Feature
Customized IP
Process Name
CanSemi 90nm-HV 1.2V_6V_32V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Cansemi | HV | 0.09μm | 5V | 8Kx8 | x | YGF8K08G90H5BA1_A03 | |
| FTP+Information | Cansemi | HV | 0.09μm | 5V | 8Kx8 | x | YGF8K08G90H5BD1_A02 |
Key Feature
Customized IP
Process Name
CanSemi 95nm MIXS 1P5M 5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Cansemi | LG | 0.095μm | 5V | 1Kx14 | x | YGF1K14G95L5AB1_A10 |
Process Name
0.153um 5V CMOS EN Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Rongsemi | LG | 0.153μm | 5V | 4Kx16 | x | YGF4K16RA153L5AB1_A00 | |
| FTP+Information | Rongsemi | LG | 0.153μm | 5V | 2Kx16 | x | YGF2K16RA153L5AB1_A10 |
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx32 | v | YMG4K32F15L5AA1_A10 |
Process Name
90nm LP 1.5V_5V Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | Runpeng | LG | 0.09μm | 5V | 2Kx16 | x | YGF2K16RB90L5AB1_A10 | |
| FTP+Information | Runpeng | LG | 0.09μm | 5V | 2Kx16 | x | YGF2K16RB90L5AA1_A10 |
Process Name
90nm_BCD_Low Power G2_1.5V/5V(Vgs),5V/9V/12V/24V/30V/40V(Vds) Process
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YFN8K32C90B5BA1_A00 | |
| FTP | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YFN8K32C90B5BB1_A00 |
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| FTP+Information | PSMC | HV | 0.09μm | 5V | 4Kx8 | x | YGF4K08P90H5BB1_A10 |
Process Name
LOGIC 110nm-G 1.5V_3.3V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP | Nexchip | LG | 0.11μm | 3.3V | 256x8 | v | YRN25608L11L3AB2_A00 |
Process Name
LOGIC 110nm-LP2 1.5V_5V
| Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 8Kx16 | v | YMG8K16L11L5AB1_A00 | |
| MTP+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMF4K16L11L5AB1_A10 | |
| MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AO1_A00 |