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AEC-Q100 (Automotive)

Grade 0

Process Name

CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	VIS	BCD	0.15μm	5V	4Kx8	x		YUF4K08V15B6BB2_A00

AEC-Q100 (Automotive)

Grade 0

Process Name

CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.15μm	6V	64x8	v		YRN6408V15B6BB5_Y00
EEPROM+Information	VIS	BCD	0.15μm	6V	8Kx8	v		YEF8K08V15B6BA5_Y00
MTP+Information	VIS	BCD	0.15μm	6V	8Kx8	v		YEF8K08V15B6BB2_A00
EEPROM	VIS	BCD	0.15μm	6V	128x8	v		YEN12808V15B6BA5_Y00

AEC-Q100 (Automotive)

Grade 1

Process Name

TSMC 0.18 UM CMOS MIXED SIGNAL GENERAL PURPOSE IIA 1P6M SALICIDE 1.8V/5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	tsmc	Mixed Mode	0.18μm	5V	16x16	v		YRN1616T18M5AA6_Y00
EEPROM	tsmc	Mixed Mode	0.18μm	5V	64x16	v		YEN6416T18M5AA2_Y00

Process Name

0.15um 3.3V/5Vdual-gate MCU Technology Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Globalfoundries	LG	0.15μm	5V	4Kx16	v		YMG4K16F15L5BF1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.15μm	5V	8Kx16	v		YMG8K16F15L5AA1_Y10
MTP+EEPROM+Information	Globalfoundries	LG	0.15μm	3.3V	16Kx16	v		YMG16K16F15L3BB1_A00
MTP+EEPROM	Globalfoundries	LG	0.15μm	3.3V	16Kx16	v		YME16K16F15L3BA1_Y00
FTP+Information	Globalfoundries	LG	0.15μm	5V	4Kx16	x		YGF4K16F15L5AB1_Y10
FTP+Information	Globalfoundries	LG	0.15μm	5V	4Kx16	x		YGF4K16F15L5AB1_Y00
FTP+Information	Globalfoundries	LG	0.15μm	5V	2Kx16	x		YGF2K16F15L5AA1_Y10

Process Name

0.18 um 1.8V/6V/12-40V LDMOS dual-gate isolated BCDLite Gen2 Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	Globalfoundries	BCD	0.18μm	5V	6Kx32	v		YMN6K32F18B5AA1_Y00
MTP+Information	Globalfoundries	BCD	0.18μm	5V	5Kx16	v		YEF5K16F18B5BA1_A00
MTP+Information	Globalfoundries	BCD	0.18μm	5V	5Kx16	v		YEF5K16F18B5BA1_A01
MTP	Globalfoundries	BCD	0.18μm	5V	16Kx8	v		YEN16K08F18B5AB1_A01

Process Name

0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Globalfoundries	BCD	0.18μm	5V	128x8	v		YRN12808F18B5BA2_Y00
EEPROM	Globalfoundries	BCD	0.18μm	5V	128x8	v		YRN12808F18B5AA2_A10
EEPROM	Globalfoundries	BCD	0.18μm	5V	128x8	v		YRN12808F18B5AA2_Y10
MTP	Globalfoundries	BCD	0.18μm	5V	8Kx32	v		YMN8K32F18B5AA1_Y00
MTP	Globalfoundries	BCD	0.18μm	5V	8Kx32	v		YEN8K32F18B5BA1_A00
MTP	Globalfoundries	BCD	0.18μm	5V	8Kx32	v		YEN8K32F18B5AA1_A00
MTP	Globalfoundries	BCD	0.18μm	5V	8Kx8	v		YEN8K08F18B5AC1_A00
MTP	Globalfoundries	BCD	0.18μm	5V	4Kx32	v		YEN4K32F18B5AA1_A00
MTP	Globalfoundries	BCD	0.18μm	5V	16Kx8	v		YEN16K08F18B5AA1_B01
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	8Kx32	v		YEG8K32F18B5AD1_Y00
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	16Kx8	v		YEG16K08F18B5BC1_B11
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	16Kx8	v		YEG16K08F18B5BB1_Y10
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	16Kx8	v		YEG16K08F18B5BB1_B11

Process Name

0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	3.3V	4Kx16	v		YEG4K16F18L3BA1_Y01
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YEG4K16F18L5BB1_C00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YEG4K16F18L5BC1_A10
MTP+Information	Globalfoundries	LG	0.18μm	3.3V	2Kx16	v		YEF2K16F18L3BA1_A10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YMG8K16F18L5BA1_Y10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YMG8K16F18L5BP1_A10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YMG8K16F18L5BP1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YMG8K16F18L5BP1_Y10
MTP+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	x		YNF4K16F18L5BP1_Y10
MTP+Information	Globalfoundries	LG	0.18μm	5V	2Kx16	x		YNF2K16F18L5BP1_Y10
MTP+Information	Globalfoundries	LG	0.18μm	3.3V	2Kx16	x		YNF2K16F18L3BB1_Y11
MTP+Information	Globalfoundries	LG	0.18μm	3.3V	2Kx16	x		YNF2K16F18L3BB1_Y10
MTP+Information	Globalfoundries	LG	0.18μm	3.3V	2Kx16	x		YNF2K16F18L3BB1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YMG8K16F18L5BR1_Y10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YMG4K16F18L5BP1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	3.3V	8Kx16	v		YMG8K16F18L3BA1_Y10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	3.3V	8Kx16	v		YMG8K16F18L3BA1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YMG4K16F18L5BP1_Y10
MTP+Information	Globalfoundries	LG	0.18μm	5V	1Kx16	x		YUF1K16F18L5BA1_B10
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YME8K16F18L5BA1_Y10
FTP+Information	Globalfoundries	LG	0.18μm	3.3V	4Kx8	v		YFF4K08F18L3AA1_Y00
EEPROM	Globalfoundries	LG	0.18μm	5V	128x8	v		YEN12808F18L5BA2_B10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BB1_C00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BC1_A10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BD1_A00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BQ1_B02
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BQ1_C01
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEG8K16F18L5BS1_C10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	3.3V	8Kx16	v		YEG8K16F18L3BA1_B01
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YEG4K16F18L5BP1_Y10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	8Kx8	v		YEG8K08F18L5BQ1_A10
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	2Kx16	v		YEG2K16F18L5BC1_A00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	2Kx16	v		YEG2K16F18L5BT1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	3.3V	16Kx8	v		YEG16K08F18L3BB1_Y00
MTP+EEPROM+Information	Globalfoundries	LG	0.18μm	5V	1Kx14	v		YEG1K14F18L5BB1_Y11
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEE8K16F18L5BB1_Y10
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEE8K16F18L5BS1_B10
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEE8K16F18L5BT1_B00
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	16Kx8	v		YEE16K08F18L5BA1_B00
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	8Kx16	v		YEE8K16F18L5BT1_B10
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	4Kx16	v		YEE4K16F18L5BS1_Y10
MTP+EEPROM	Globalfoundries	LG	0.18μm	5V	2Kx16	v		YEE2K16F18L5BR1_C10

Process Name

0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	8Kx32	v		YMG8K32F18B5AB1_Y00
MTP+EEPROM+Information	Globalfoundries	BCD	0.18μm	5V	24Kx8	v		YMG24K08F18B5AA1_Y10
EEPROM	Globalfoundries	BCD	0.18μm	5V	128x8	v		YEN12808F18B5AA2_Y01
MTP+EEPROM	Globalfoundries	BCD	0.18μm	5V	5Kx32	v		YEE5K32F18B5AA1_Y00
MTP+EEPROM	Globalfoundries	BCD	0.18μm	5V	5Kx32	v		YEE5K32F18B5AA1_A00

Process Name

0.18um LOGIC-S 6V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	PSMC	HV	0.18μm	6V	256x8	v		YE25608P18H6AC2_Y00

Process Name

0.18um Mixed Signal 1.8V/5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SMIC	Mixed Mode	0.18μm	5V	256x8	v		YEN25608S18M5AA2_A01
EEPROM	SMIC	Mixed Mode	0.18μm	5V	256x8	v		YRN25608S18M5AA2_Y00

Process Name

0.18um MS and BCD Salicide 1.8V/5V/10V/12V/20V/35V/40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SMIC	BCD	0.18μm	5V	256x8	v		YRN25608S18B5AB2_Y00
EEPROM	SMIC	BCD	0.18μm	5V	128x8	v		YRN12808S18B5AB2_Y10

Process Name

0.18um-SA(Epi) 5V_18V_40V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	PSMC	HV	0.18μm	6V	256x8	v		YE25608P18H6AD2_Y00

Process Name

0.28 um0.22 um Embedded High Voltage 3.3 V6.75 V13.5 V 2P5M P-Sub Polycide Gox65310 Low High Low Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	UMC	HV	0.28μm	3.3V	128x8	v		YE12808U28H3AB1_Y00

Process Name

0.35um 5V/8V/10V/18V/25V/40V 2P3M BCD Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
OTP	Nuvoton	BCD	0.35μm	5V	4x8	x		YUO0408W35B5NA1_A01
OTP	Nuvoton	BCD	0.35μm	5V	4x8	x		YPN0408W35B5NA1_A00

Process Name

1.2V/5V Mixed-Signal and Power Management Process(POR1.9)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	Tower	BCD	0.065μm	5V	128x16	v		YMN12816O65B5BA1_A00
MTP+Information	Tower	BCD	0.065μm	5V	8Kx32	v		YEF8K32O65B5BA1_Y10

Process Name

90nm LOGIC-M, 1.32V(1.2V)/6V/32V tri-voltages Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	PSMC	HV	0.09μm	6V	512x8	x		YUN51208E90H6AB2_Y00

Process Name

CB015RL20001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM, 1P6M, SALICIDE, 1.8/6V(Vgs=1.8/6V, Vds=12/16.5/18/20/24/26/30V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.15μm	6V	64x8	v		YEN6408V15B6AC2_A03

Process Name

CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YUN6408V15B5AA2_A10
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YUN6408V15B5AA2_A11
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YUN6408V15B5AA2_A00
EEPROM	VIS	BCD	0.15μm	5V	64x8	v		YE6408V15B6AA2_A00

Process Name

CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	BCD	0.15μm	5V	6Kx32	v		YEN6K32V15B5BA1_A10

Process Name

CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YUN6408V15B5AA2_Y11
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YUN6408V15B5AA2_Y10
EEPROM	VIS	BCD	0.15μm	5V	13x8	x		YUN1308V15B5AA2_A00
MTP+Information	VIS	BCD	0.15μm	6V	8Kx8	x		YUF8K08V15B6BC2_A00
EEPROM	VIS	BCD	0.15μm	5V	64x8	x		YSN6408V15B5AA2_Y10
MTP+Information	VIS	BCD	0.15μm	5V	4Kx8	x		YNF4K08V15B6BA2_A01
MTP+Information	VIS	BCD	0.15μm	5V	4Kx8	x		YNF4K08V15B6BA2_A00
EEPROM	VIS	BCD	0.15μm	5V	1Kx8	v		YEN1K08V15B5BA2_A00

Process Name

CB015RL23019-0.15UM(Front-End/Back-End 0.18UM/0.15UM), BCD 1P6M, SALICIDE BURIED LAYER EPI, 1.8/5/6/9/12/16/20/24/29/30/40/45/60V (Vgs=1.8/5V, Vds=1.8/5/6/9/12/16/20/24/29/30/40/45/60V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	BCD	0.15μm	5V	8Kx32	v		YMN8K32V15B5BB1_Y00
MTP	VIS	BCD	0.15μm	5V	6Kx32	v		YMN6K32V15B5BA1_Y10
MTP	VIS	BCD	0.15μm	5V	3584x32	v		YMN358432V15B5BA1_Y00

Process Name

CB025RL20008-0.25UM, CMOS BCD Low Ron LDMOS MiM, 1P5M, SALICIDE, 2.5/5V(Vgs=2.5/5V, Vds=12/18/24/30V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.25μm	5V	32x8	v		YE3208V25B5AB2_A00
EEPROM	VIS	BCD	0.25μm	5V	16x8	v		YE1608V25B5AB2_A00

Process Name

CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.25μm	5V	32x8	x		YUN3208V25B5AA2_A00
MTP	VIS	BCD	0.25μm	5V	64x8	x		YU6408V25B5AC_C00
MTP	VIS	BCD	0.25μm	5V	64x8	x		YU6408V25B5AC_A00
MTP	VIS	BCD	0.25μm	5V	64x8	x		YU6408V25B5AA_A10
MTP	VIS	BCD	0.25μm	5V	64x8	x		YU6408V25B5AA_A03
MTP	VIS	BCD	0.25μm	5V	32x8	x		YU3208V25B5AA2_A01
EEPROM	VIS	BCD	0.25μm	5V	512x8	v		YRN51208V25B5AB2_A10
EEPROM	VIS	BCD	0.25μm	5V	64x8	v		YEN6408V25B5AB2_A11
EEPROM	VIS	BCD	0.25μm	5V	64x8	v		YEN6408V25B5AA2_A00
EEPROM	VIS	BCD	0.25μm	5V	64x8	v		YE6408V25B5AC2_A00

Process Name

CB030RL10006-0.30UM, CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Deep N-Well, 5/8/12/18/24/30/40V(Vgs=5V, Vds=5/8/12/18/24/30/40V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	BCD	0.3μm	5V	4x8	x		YU0408V30B5AA_A00

Process Name

CB040RL10003-0.40UM(Front-End/Back-End 0.50UM/0.35UM), CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Buried Layer EPI, 40V(Vgs=5/20/40V, Vds=5/20/40V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	VIS	BCD	0.4μm	5V	64x10	v		YEN6410V40B5AA2_A00

Process Name

CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+Information	VIS	Mixed Mode	0.15μm	3.3V	2Kx32	v		YEF2K32V15M3BA1_A10
MTP	VIS	Mixed Mode	0.15μm	3.3V	256x32	v		YEN25632V15M3BA1_A00
MTP	VIS	Mixed Mode	0.15μm	3.3V	4Kx32	v		YE4K32V15M3BF1_A00
MTP+Information	VIS	Mixed Mode	0.15μm	3.3V	8Kx32	v		YEF8K32V15M3BC1_A10
MTP+Information	VIS	Mixed Mode	0.15μm	3.3V	8Kx32	v		YEF8K32V15M3BB1_A00
MTP	VIS	Mixed Mode	0.15μm	3.3V	8Kx32	v		YE8K32V15M3BF1_A00

Process Name

CV011MD00010-0.11UM, CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, Deep N-Well, 1.5/3.3V(Vgs=1.5/3.3V, Vds=1.5/3.3V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	Mixed Mode	0.11μm	3.3V	6Kx32	v		YEN6K32V11M3BA1_A11
MTP	VIS	Mixed Mode	0.11μm	3.3V	6Kx32	v		YEN6K32V11M3BA1_A10
MTP	VIS	Mixed Mode	0.11μm	3.3V	64x32	v		YEN6432V11M3BA1_Y00
MTP	VIS	Mixed Mode	0.11μm	3.3V	4Kx32	v		YEN4K32V11M3BA1_A10
MTP	VIS	Mixed Mode	0.11μm	3.3V	16Kx32	v		YEN16K32V11M3BA1_A00

Process Name

CV015MD00016-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, 1.8/3.3/18V(Vgs=1.8/3.3/18V, Vds=1.8/3.3/18V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	BCD	0.15μm	3.3V	2Kx32	v		YE2K32V15H3BD1_A00
MTP+Information	VIS	HV	0.15μm	3.3V	4Kx32	v		YEF4K32V15H3BA1_Y10
MTP	VIS	HV	0.15μm	3.3V	8Kx32	v		YEN8K32V15H3BD1_A00
MTP	VIS	HV	0.15μm	3.3V	8Kx32	v		YEN8K32V15H3BP1_A10
MTP	VIS	HV	0.15μm	3.3V	64x32	v		YEN6432V15H3BD1_A11
MTP	VIS	HV	0.15μm	3.3V	64x32	v		YEN6432V15H3BD1_A10
MTP	VIS	HV	0.15μm	3.3V	512x32	v		YEN51232V15H3BD1_A00

Process Name

CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	HV	0.3μm	3.3V	64x10	v		YRN6410V30H3AA1_Y10
EEPROM	VIS	HV	0.3μm	3.3V	36x8	v		YRN3608V30H3AA1_Y00
EEPROM	VIS	HV	0.3μm	3.3V	1x8	v		YE0108V30H3AA_Y10

Process Name

CV035MS00001-0.35UM, CMOS High Voltage Mixed Signal Based LDMOS, 2P4M, POLYCIDE, Buried Layer EPI, 3.3/40V(Vgs=3.3/40V, Vds=40V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	VIS	HV	0.35μm	3.3V	8Kx8	v		YF8K08V35H3BB_A00

Process Name

HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	SKHynix	BCD	0.18μm	5V	8Kx32	v		YMN8K32X18B5AA1_Y10
MTP	SKHynix	BCD	0.18μm	5V	8Kx32	v		YMN8K32X18B5AA1_Y11
MTP	SKHynix	BCD	0.18μm	5V	32Kx8	v		YMN32K08X18B5AA1_Y10
MTP	Skhynix	BCD	0.18μm	5V	16Kx32	v		YMN16K32X18B5AA1_Y10
MTP	SKHynix	BCD	0.18μm	5V	16Kx8	v		YMN16K08X18B5AA1_Y10

Process Name

HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	HHGRACE	LG	0.095μm	5V	64x8	v		YRN6408C95L5BA2_Y10
MTP	HHGRACE	LG	0.095μm	5V	4Kx16	v		YMN4K16C95L5BA1_Y10
FTP+Information	HHGRACE	LG	0.095μm	5V	4Kx32	v		YFF4K32C95L5BA1_Y10

Process Name

HL110LP-110nm Logic CMOS Low Power Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	SKHynix	LG	0.11μm	3.3V	8Kx32	v		YMN8K32X11L3BA1_Y00
MTP+Information	SKHynix	LG	0.11μm	3.3V	16Kx32	v		YMF16K32X11L3BA1_Y10
MTP+Information	SKHynix	LG	0.11μm	3.3V	16Kx32	v		YMF16K32X11L3AA1_Y11

Process Name

HL13G-0.13um 1.2V/3.3V(2.5V) Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	40x8	v		YRN4008N13L3AA2_A00
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	512x8	v		YRN51208N13L3AA2_A00
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	40x8	v		YRN4008N13L3AA2_Y00
EEPROM	Key-foundry	LG	0.13μm	3.3V	256x8	v		YEN25608N13L3AA2_A00
EEPROM	Key-foundry	LG	0.13μm	3.3V	256x8	v		YEN25608N13L3AA2_A01
EEPROM	Key-foundry	LG	0.13μm	3.3V	256x8	v		YEN25608N13L3AB2_A00
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	256x8	v		YRN25608N13L3AA2_Y00
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	256x8	v		YRN25608N13L3AD2_A00
EEPROM	SK keyfoundry	LG	0.13μm	3.3V	128x8	v		YEN12808N13L3AD2_A00
EEPROM	Key-foundry	LG	0.13μm	3.3V	128x8	v		YEN12808N13L3AB2_A00
EEPROM	Key-foundry	LG	0.13μm	3.3V	128x8	v		YEN12808N13L3AA2_A00

Process Name

HL16GF-0.16um 1.8/3.3V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Key-foundry	LG	0.16μm	3.3V	256x8	v		YEN25608N16L3AB2_A00_110
EEPROM	SK keyfoundry	LG	0.16μm	3.3V	512x8	v		YEN51208N16L3AA2_Y00_110
EEPROM	Key-foundry	LG	0.16μm	3.3V	512x8	v		YEN51208N16L3AA2_A01_110
EEPROM	SK keyfoundry	LG	0.16μm	3.3V	512x8	v		YEN51208N16L3AA2_A02_110
EEPROM	Key-foundry	LG	0.16μm	3.3V	1Kx8	v		YEN1K08N16L3AA2_A02_110

Process Name

HL18GFL-0.18um 1.8/3.3/5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SK keyfoundry	LG	0.18μm	3.3V	256x8	v		YEN25608N18L3AE2_A01
EEPROM	SK keyfoundry	LG	0.18μm	3.3V	256x8	v		YEN25608N18L3AE2_Y00
EEPROM	SK keyfoundry	LG	0.18μm	3.3V	256x8	v		YEN25608N18L3AE2_Y01

Process Name

HL18GFL-AMA-0.18um 1.8/3.3/5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SK keyfoundry	LG	0.18μm	3.3V	64x8	v		YRN6408N18L3AA2_Y01

Process Name

L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	MXIC	LG	0.18μm	5V	1Kx16	x		YUN1K16M18L5BB1_A10
MTP	MXIC	LG	0.18μm	5V	2Kx16	x		YUN2K16M18L5BF1_A10
MTP	MXIC	LG	0.18μm	5V	4Kx16	x		YUN4K16M18L5BE1_A11
MTP+EEPROM+Information	MXIC	LG	0.18μm	5V	2Kx32	v		YEG2K32M18L5BE1_A10_105
MTP+Information	MXIC	LG	0.18μm	5V	4Kx16	v		YEF4K16M18L5BB1_A10
MTP+Information	MXIC	LG	0.18μm	5V	4Kx16	v		YEF4K16M18L5BB1_Y10
MTP	MXIC	LG	0.18μm	5V	8Kx8	v		YEN8K08M18L5BB1_A01
MTP+EEPROM+Information	MXIC	LG	0.18μm	5V	2Kx32	v		YEG2K32M18L5BE1_A10

Process Name

LCDDr 110nm-N2 1.5V_6V_32V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
FTP	Nexchip	HV	0.11μm	5V	3Kx8	x		YGN3K08L11H5BA1_Y00
FTP	Nexchip	HV	0.11μm	5V	2Kx8	x		YGN2K08L11H5BB1_A00

Process Name

LCDDr 90nm-MP 1.32V_6V_32V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	Nexchip	HV	0.09μm	6V	512x8	x		YUN51208L90H6AB2_A01
EEPROM	Nexchip	HV	0.09μm	6V	512x8	x		YUN51208L90H6AA2_Y00
EEPROM	Nexchip	HV	0.09μm	6V	256x8	x		YSN25608L90H6AA2_Y00

Process Name

LOGIC 110nm-LP2 1.5V_5V

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP+EEPROM+Information	Nexchip	LG	0.11μm	5V	8Kx16	v		YMG8K16L11L5BA1_A14
MTP+EEPROM+Information	Nexchip	LG	0.11μm	5V	4Kx16	v		YMG4K16L11L5BA1_A11
MTP+EEPROM	Nexchip	LG	0.11μm	5V	8Kx32	v		YME8K32L11L5BA1_Y10
FTP+Information	Nexchip	LG	0.11μm	5V	4Kx16	x		YGF4K16L11L5AA1_Y10
FTP+Information	Nexchip	LG	0.11μm	5V	4Kx16	x		YGF4K16L11L5AB1_A11
FTP+Information	Nexchip	LG	0.11μm	5V	4Kx16	x		YGF4K16L11L5AA1_Y00
FTP+Information	Nexchip	LG	0.11μm	5V	2Kx16	x		YGF2K16L11L5AC1_A00
FTP+Information	Nexchip	LG	0.11μm	5V	1Kx16	x		YGF1K16L11L5AB1_A00

Process Name

Silergy 0.162 um Mixed Mode 5V 1P5M Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	SMIC	Mixed Mode	0.16μm	5V	128x8	v		YRN12808S16M5AB2_Y10
EEPROM	SMIC	Mixed Mode	0.16μm	5V	128x8	v		YRN12808S16M5AA2_Y10

Process Name

Silergy 0.162um Mixed Mode 5V 1P5M Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
EEPROM	HJTC	Mixed Mode	0.16μm	5V	128x8	v		YRN12808H16M5AA2_Y10

Process Name

TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process

Category	Foundry	Process Type	Process Node	IO device Type	Density	Charge Pump	IP Size (µm × µm)	IP Name
MTP	tsmc	BCD	0.18μm	5V	8Kx32	v		YMN8K32T18B5BA1_Y00
MTP	tsmc	BCD	0.18μm	5V	64x8	v		YMN6408T18B5AA2_Y00
MTP+Information	tsmc	BCD	0.18μm	5V	8Kx32	v		YMF8K32T18B5BE1_A10
MTP+Information	tsmc	BCD	0.18μm	5V	6Kx32	v		YMF6K32T18B5BA1_A00
MTP+Information	tsmc	BCD	0.18μm	5V	6Kx32	v		YMF6K32T18B5BB1_A00
MTP+Information	tsmc	BCD	0.18μm	5V	4Kx32	v		YEF4K32T18B5BE1_A12
MTP+Information	tsmc	BCD	0.18μm	5V	8Kx32	v		YEF8K32T18B5BE1_A11
MTP+Information	tsmc	BCD	0.18μm	5V	8Kx32	v		YMF8K32T18B5BC1_A00
MTP+Information	tsmc	BCD	0.18μm	5V	8Kx32	v		YMF8K32T18B5BB1_A10
MTP+Information	tsmc	BCD	0.18μm	5V	8Kx32	v		YMF8K32T18B5BA1_A00
MTP+Information	tsmc	BCD	0.18μm	5V	24Kx8	v		YMF24K08T18B5BA1_A10
MTP+Information	tsmc	BCD	0.18μm	5V	16Kx32	v		YMF16K32T18B5BA1_Y10
EEPROM	tsmc	BCD	0.18μm	5V	64x16	v		YEN6416T18B5AB2_B00
EEPROM	tsmc	BCD	0.18μm	5V	64x16	v		YEN6416T18B5AB2_Y00
EEPROM	tsmc	BCD	0.18μm	5V	32x8	v		YEN3208T18B5AB2_Y10
EEPROM	tsmc	BCD	0.18μm	5V	32x8	v		YEN3208T18B5AB2_Y00
EEPROM	tsmc	BCD	0.18μm	5V	32x8	v		YEN3208T18B5AB2_B10
MTP	tsmc	BCD	0.18μm	5V	12Kx32	v		YEN12K32T18B5BB1_Y00
EEPROM	tsmc	BCD	0.18μm	5V	128x8	v		YEN12808T18B5AB2_Y10
MTP+Information	tsmc	BCD	0.18μm	5V	16Kx8	v		YEF16K08T18B5BA1_A11
MTP+Information	tsmc	BCD	0.18μm	5V	16Kx32	v		YEF16K32T18B5BD1_Y00
MTP+Information	tsmc	BCD	0.18μm	5V	16Kx32	v		YEF16K32T18B5BE1_A00