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Category
Foundry
Process Type
Process Node
IO device Type
Density
Charge Pump
AEC-Q100 (Automotive)
IP Name
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AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x 960x851 YUF4K08V15B6BB2_A00
AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.15μm 6V 128x8 v 960x494 YEN12808V15B6BA5_Y00
AEC-Q100 (Automotive)
Grade 1
Process Name
TSMC 0.18 UM CMOS MIXED SIGNAL GENERAL PURPOSE IIA 1P6M SALICIDE 1.8V/5V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM tsmc Mixed Mode 0.18μm 5V 64x16 v 329x630 YEN6416T18M5AA2_Y00
Process Name
0.18 um 1.8V/6V/12-40V LDMOS dual-gate isolated BCDLite Gen2 Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP Globalfoundries BCD 0.18μm 5V 6Kx32 v 692x1690 YMN6K32F18B5AA1_Y00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1309 YEN16K08F18B5AB1_A01
MTP+Information Globalfoundries BCD 0.18μm 5V 5Kx16 v 685x1227 YEF5K16F18B5BA1_A00
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v 692x548 YRN12808F18B5AA2_A10
MTP Globalfoundries BCD 0.18μm 5V 8Kx8 v 692x940 YEN8K08F18B5AC1_A00
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v 692x2050 YEN8K32F18B5AA1_A00
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v 692x2105 YEN8K32F18B5BA1_A00
MTP Globalfoundries BCD 0.18μm 5V 4Kx32 v 692x1283 YEN4K32F18B5AA1_A00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1309 YEN16K08F18B5AA1_B01
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1309 YEN16K08F18B5AA1_C00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 685x1696 YEG16K08F18B5BB1_B11
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 685x1696 YEG16K08F18B5BB1_Y10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v 692x1377 YEG16K08F18B5BC1_B11
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx16 x 390x422 YUF1K16F18L5BA1_B10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x 563x450 YNF2K16F18L3BB1_Y10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x 563x450 YNF2K16F18L3BB1_Y11
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x 390x591 YNF2K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx16 x 390x927 YNF4K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x 563x450 YNF2K16F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YMG8K16F18L5BR1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v 563x919.4 YMG8K16F18L3BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YMG8K16F18L5BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YMG8K16F18L5BP1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YMG8K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YMG4K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YMG4K16F18L5BP1_Y10
FTP+Information Globalfoundries LG 0.18μm 3.3V 4Kx8 v 563x436 YFF4K08F18L3AA1_Y00
EEPROM Globalfoundries LG 0.18μm 5V 128x8 v 685x500 YEN12808F18L5BA2_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEG8K16F18L5BS1_C10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1266 YEG8K16F18L5BQ1_C01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx8 v 685x873 YEG8K08F18L5BQ1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEG8K16F18L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEG8K16F18L5BD1_A00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1266 YEG8K16F18L5BQ1_B02
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEG8K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v 563x885 YEG8K16F18L3BA1_B01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YEG4K16F18L5BP1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YEG4K16F18L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v 685x867 YEG4K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v 685x699 YEG2K16F18L5BT1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v 563x835 YEG16K08F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 1Kx14 v 685x610 YEG1K14F18L5BB1_Y11
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v 685x699 YEG2K16F18L5BC1_A00
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 v 563x388 YEF2K16F18L3BA1_A10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 16Kx8 v 685x1227 YEE16K08F18L5BA1_B00
MTP+EEPROM Globalfoundries LG 0.18μm 5V 2Kx16 v 685x697 YEE2K16F18L5BR1_C10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 4Kx16 v 685x868 YEE4K16F18L5BS1_Y10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEE8K16F18L5BS1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEE8K16F18L5BT1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v 685x1230 YEE8K16F18L5BT1_B00
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 24Kx8 v 692x1787 YMG24K08F18B5AA1_Y10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v 692x2468 YEG8K32F18B5AA1_Y10
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v 692x546 YEN12808F18B5AA2_Y00
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 5Kx32 v 692x1578 YEE5K32F18B5AA1_A00
Process Name
0.18um LOGIC-S 6V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM PSMC HV 0.18μm 6V 256x8 v 598x858 YE25608P18H6AC2_Y00
Process Name
0.18um Mixed Signal 1.8V/5V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM SMIC Mixed Mode 0.18μm 5V 256x8 v 325x1210.5 YRN25608S18M5AA2_Y00
EEPROM SMIC Mixed Mode 0.18μm 5V 256x8 v 325x1210.5 YEN25608S18M5AA2_A01
Process Name
0.18um MS and BCD Salicide 1.8V/5V/10V/12V/20V/35V/40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM SMIC BCD 0.18μm 5V 256x8 v 325x1210.5 YRN25608S18B5AB2_Y00
Process Name
0.18um-SA(Epi) 5V_18V_40V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM PSMC HV 0.18μm 6V 256x8 v 598x858 YE25608P18H6AD2_Y00
Process Name
0.28 um0.22 um Embedded High Voltage 3.3 V6.75 V13.5 V 2P5M P-Sub Polycide Gox65310 Low High Low Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM UMC HV 0.28μm 3.3V 128x8 v 914x310 YE12808U28H3AB1_Y00
Process Name
0.35um 5V/8V/10V/18V/25V/40V 2P3M BCD Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
OTP Nuvoton BCD 0.35μm 5V 4x8 x 138x347.5 YUO0408W35B5NA1_A01
Process Name
90nm LOGIC-M, 1.32V(1.2V)/6V/32V tri-voltages Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM PSMC HV 0.09μm 6V 512x8 x 177x982 YUN51208E90H6AB2_Y00
Process Name
CB015RL20001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM, 1P6M, SALICIDE, 1.8/6V(Vgs=1.8/6V, Vds=12/16.5/18/20/24/26/30V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.15μm 6V 64x8 v 267x572 YEN6408V15B6AC2_A03
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.15μm 5V 64x8 x 458x448 YUN6408V15B5AA2_A00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 v 960x1439 YEF8K08V15B6BB2_A00
EEPROM VIS BCD 0.15μm 5V 64x8 v 458x818 YE6408V15B6AA2_A00
EEPROM VIS BCD 0.15μm 5V 64x8 x 458x448 YUN6408V15B5AA2_A10
EEPROM VIS BCD 0.15μm 5V 64x8 x 458x448 YUN6408V15B5AA2_A11
Process Name
CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS BCD 0.15μm 5V 6Kx32 v 756x2100 YEN6K32V15B5BA1_A10
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.15μm 5V 13x8 x 458x411 YUN1308V15B5AA2_A00
EEPROM VIS BCD 0.15μm 5V 64x8 x 458x448 YSN6408V15B5AA2_Y10
EEPROM VIS BCD 0.15μm 5V 1Kx8 v 960x614 YEN1K08V15B5BA2_A00
Process Name
CB025RL20008-0.25UM, CMOS BCD Low Ron LDMOS MiM, 1P5M, SALICIDE, 2.5/5V(Vgs=2.5/5V, Vds=12/18/24/30V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.25μm 5V 32x8 v 458x783 YE3208V25B5AB2_A00
EEPROM VIS BCD 0.25μm 5V 16x8 v 458x775 YE1608V25B5AB2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AC_A00
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AC_C00
EEPROM VIS BCD 0.25μm 5V 32x8 x 263x307 YUN3208V25B5AA2_A00
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AA_A10
MTP VIS BCD 0.25μm 5V 64x8 x 458x428 YU6408V25B5AA_A03
MTP VIS BCD 0.25μm 5V 32x8 x 263x307 YU3208V25B5AA2_A01
EEPROM VIS BCD 0.25μm 5V 64x8 v 458x798 YEN6408V25B5AB2_A11
EEPROM VIS BCD 0.25μm 5V 64x8 v 458x798 YEN6408V25B5AA2_A00
EEPROM VIS BCD 0.25μm 5V 64x8 v 458x798 YE6408V25B5AC2_A00
Process Name
CB040RL10003-0.40UM(Front-End/Back-End 0.50UM/0.35UM), CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Buried Layer EPI, 40V(Vgs=5/20/40V, Vds=5/20/40V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM VIS BCD 0.4μm 5V 64x10 v 1182x457 YEN6410V40B5AA2_A00
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS Mixed Mode 0.15μm 3.3V 256x32 v 1170x311 YEN25632V15M3BA1_A00
MTP+Information VIS Mixed Mode 0.15μm 3.3V 8Kx32 v 1170x915 YEF8K32V15M3BB1_A00
MTP+Information VIS Mixed Mode 0.15μm 3.3V 8Kx32 v 1170x915 YEF8K32V15M3BC1_A10
MTP+Information VIS Mixed Mode 0.15μm 3.3V 2Kx32 v 1170x465 YEF2K32V15M3BA1_A10
MTP VIS Mixed Mode 0.15μm 3.3V 4Kx32 v 1170x628 YE4K32V15M3BF1_A00
MTP VIS Mixed Mode 0.15μm 3.3V 8Kx32 v 1170x915 YE8K32V15M3BF1_A00
Process Name
CV011MD00010-0.11UM, CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, Deep N-Well, 1.5/3.3V(Vgs=1.5/3.3V, Vds=1.5/3.3V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS Mixed Mode 0.11μm 3.3V 6Kx32 v 914x590 YEN6K32V11M3BA1_A10
MTP VIS Mixed Mode 0.11μm 3.3V 6Kx32 v 914x590 YEN6K32V11M3BA1_A11
MTP VIS Mixed Mode 0.11μm 3.3V 64x32 v 914x247 YEN6432V11M3BA1_Y00
MTP VIS Mixed Mode 0.11μm 3.3V 4Kx32 v 914x483 YEN4K32V11M3BA1_A10
MTP VIS Mixed Mode 0.11μm 3.3V 16Kx32 v 914x1120 YEN16K32V11M3BA1_A00
Process Name
CV015MD00016-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, 1.8/3.3/18V(Vgs=1.8/3.3/18V, Vds=1.8/3.3/18V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS HV 0.15μm 3.3V 8Kx32 v 1170x875 YEN8K32V15H3BD1_A00
MTP VIS HV 0.15μm 3.3V 8Kx32 v 1170x875 YEN8K32V15H3BP1_A10
MTP VIS HV 0.15μm 3.3V 64x32 v 1170x300 YEN6432V15H3BD1_A11
MTP VIS HV 0.15μm 3.3V 64x32 v 1170x300 YEN6432V15H3BD1_A10
MTP VIS HV 0.15μm 3.3V 512x32 v 1170x326 YEN51232V15H3BD1_A00
MTP+Information VIS HV 0.15μm 3.3V 4Kx32 v 1170x628 YEF4K32V15H3BA1_Y10
MTP VIS BCD 0.15μm 3.3V 2Kx32 v 1170x482 YE2K32V15H3BD1_A00
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS HV 0.3μm 3.3V 64x10 v 752x310 YRN6410V30H3AA1_Y10
EEPROM VIS HV 0.3μm 3.3V 36x8 v 691x310 YRN3608V30H3AA1_Y00
EEPROM VIS HV 0.3μm 3.3V 1x8 v 365.7x551.55 YE0108V30H3AA_Y10
Process Name
CV035MS00001-0.35UM, CMOS High Voltage Mixed Signal Based LDMOS, 2P4M, POLYCIDE, Buried Layer EPI, 3.3/40V(Vgs=3.3/40V, Vds=40V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP VIS HV 0.35μm 3.3V 8Kx8 v 693x1273 YF8K08V35H3BB_A00
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP SKHynix BCD 0.18μm 5V 8Kx32 v 645x2088 YMN8K32X18B5AA1_Y10
MTP Skhynix BCD 0.18μm 5V 16Kx32 v 645x3520 YMN16K32X18B5AA1_Y10
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Key-foundry LG 0.13μm 3.3V 40x8 v 198.5x230 YRN4008N13L3AA2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 40x8 v 198.5x230 YRN4008N13L3AA2_Y00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v 205x383 YRN25608N13L3AA2_Y00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v 205x383 YEN25608N13L3AA2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v 205x383 YEN25608N13L3AA2_A01
EEPROM Key-foundry LG 0.13μm 3.3V 256x8 v 205x383 YEN25608N13L3AB2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v 198.5x300 YEN12808N13L3AA2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v 198.5x300 YEN12808N13L3AB2_A00
EEPROM Key-foundry LG 0.13μm 3.3V 128x8 v 205x300 YEN12808N13L3AD2_A00
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Key-foundry LG 0.16μm 3.3V 512x8 v 463.1x1315.6 YEN51208N16L3AA2_Y00_110
EEPROM Key-foundry LG 0.16μm 3.3V 512x8 v 463.1x1315.6 YEN51208N16L3AA2_A01_110
EEPROM Key-foundry LG 0.16μm 3.3V 512x8 v 463.1x1315.6 YEN51208N16L3AA2_A02_110
EEPROM Key-foundry LG 0.16μm 3.3V 256x8 v 463.1x1015.3 YEN25608N16L3AB2_A01_110
EEPROM Key-foundry LG 0.16μm 3.3V 256x8 v 463.1x1015.3 YEN25608N16L3AB2_Y00_110
EEPROM Key-foundry LG 0.16μm 3.3V 256x8 v 463.1x1015.3 YEN25608N16L3AB2_A00_110
EEPROM Key-foundry LG 0.16μm 3.3V 1Kx8 v 463.1x1951.4 YEN1K08N16L3AA2_A02_110
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Key-foundry LG 0.18μm 3.3V 256x8 v 907x421 YEN25608N18L3AE2_Y00
EEPROM Key-foundry LG 0.18μm 3.3V 256x8 v 907x421 YEN25608N18L3AE2_A01
Process Name
HL18GFL-AMA-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Key-foundry LG 0.18μm 3.3V 64x8 v 421x687 YRN6408N18L3AA2_Y01
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP MXIC LG 0.18μm 5V 4Kx16 x 375x893 YUN4K16M18L5BE1_A11
MTP MXIC LG 0.18μm 5V 1Kx16 x 375x444 YUN1K16M18L5BB1_A10
MTP MXIC LG 0.18μm 5V 2Kx16 x 375x594 YUN2K16M18L5BF1_A10
MTP MXIC LG 0.18μm 5V 8Kx8 v 396x1464 YEN8K08M18L5BB1_A01
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v 632x1013 YEG2K32M18L5BE1_A10
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v 396x1459 YEF4K16M18L5BB1_Y10
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v 396x1459 YEF4K16M18L5BB1_A10
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
EEPROM Nexchip HV 0.09μm 6V 512x8 x 250x628 YUN51208L90H6AA2_Y00
EEPROM Nexchip HV 0.09μm 6V 512x8 x 250x628 YUN51208L90H6AB2_A01
EEPROM Nexchip HV 0.09μm 6V 256x8 x 250x434 YSN25608L90H6AA2_Y00
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type
Process
Node
IO device
Type
Density Charge
Pump
IP Size
(µm × µm)
IP Name SPEC
MTP tsmc BCD 0.18μm 5V 64x8 v 329x519 YMN6408T18B5AA2_Y00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v 621x2290 YMF8K32T18B5BB1_A10
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v 621x2290 YMF8K32T18B5BC1_A00
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v 621x1864 YMF6K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v 621x1864 YMF6K32T18B5BB1_A00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v 621x2290 YMF8K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v 621x3654 YMF16K32T18B5BA1_Y10
MTP+Information tsmc BCD 0.18μm 5V 24Kx8 v 621x1863 YMF24K08T18B5BA1_A10
EEPROM tsmc BCD 0.18μm 5V 64x16 v 329x602 YEN6416T18B5AB2_B00
EEPROM tsmc BCD 0.18μm 5V 64x16 v 329x602 YEN6416T18B5AB2_Y00
EEPROM tsmc BCD 0.18μm 5V 32x8 v 329x451 YEN3208T18B5AB2_B10
EEPROM tsmc BCD 0.18μm 5V 32x8 v 329x451 YEN3208T18B5AB2_Y00
EEPROM tsmc BCD 0.18μm 5V 32x8 v 329x451 YEN3208T18B5AB2_Y10
MTP tsmc BCD 0.18μm 5V 12Kx32 v 621x2923 YEN12K32T18B5BB1_Y00
EEPROM tsmc BCD 0.18μm 5V 128x8 v 329x602 YEN12808T18B5AB2_Y10
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v 621x2290 YEF8K32T18B5BE1_A11
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v 621x3654 YEF16K32T18B5BE1_A00
MTP+Information tsmc BCD 0.18μm 5V 16Kx8 v 621x1507 YEF16K08T18B5BA1_A11
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