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Process Type
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Charge Pump
AEC-Q100 (Automotive)
IP Name
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AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x YUF4K08V15B6BB2_A00
AEC-Q100 (Automotive)
Grade 0
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 6V 64x8 v YRN6408V15B6BB5_Y00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 v YMF8K08V15B6BA5_Y00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 v YEF8K08V15B6BA5_Y00
MTP+Information VIS BCD 0.15μm 6V 8Kx8 v YEF8K08V15B6BB2_A00
MTP VIS BCD 0.15μm 6V 128x8 v YEN12808V15B6BA5_Y00
AEC-Q100 (Automotive)
Grade 1
Process Name
TSMC 0.18 UM CMOS MIXED SIGNAL GENERAL PURPOSE IIA 1P6M SALICIDE 1.8V/5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP tsmc Mixed Mode 0.18μm 5V 16x16 v YRN1616T18M5AA6_Y00
MTP tsmc Mixed Mode 0.18μm 5V 64x16 v YEN6416T18M5AA2_Y00
AEC-Q100 (Automotive)
Grade 3
Process Name
0.18um MS and BCD Salicide 1.8_5V CMOS and 5-140V LDMOS Automotive Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 64x8 v YRN6408S18B5ABD_A00
Process Name
0.153um 1.8/5V BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Rongsemi BCD 0.153μm 5V 8Kx32 v YMF8K32RA15B5BB1_A00
Process Name
0.153um Logic and Mixed Signal 1P6M Salicide 1.8V_3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information SMIC Mixed Mode 0.153μm 3.3V 16Kx32 v YEF16K32S15M3BA1_A00
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMF4K16F15L5BA1_A00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMG8K16F15L5AA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 4Kx16 v YMG4K16F15L5BF1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.15μm 3.3V 16Kx16 v YMG16K16F15L3BB1_A00
MTP+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YMF8K16F15L5BB1_B00
MTP+EEPROM Globalfoundries LG 0.15μm 3.3V 16Kx16 v YME16K16F15L3BA1_Y00
FTP+Information Globalfoundries LG 0.15μm 5V 512x16 x YGF51216F15L5AA1_Y00
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AB1_Y00
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AB1_Y10
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AC1_Y10
FTP+Information Globalfoundries LG 0.15μm 5V 4Kx16 x YGF4K16F15L5AA1_Y10
FTP+Information Globalfoundries LG 0.15μm 5V 2Kx16 x YGF2K16F15L5AA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.15μm 5V 8Kx16 v YEG8K16F15L5BA1_Y10
MTP+Information Globalfoundries LG 0.15μm 3.3V 4Kx16 v YEF4K16F15L3BB1_A12
Process Name
0.162um Mixed Mode 5V 1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC Mixed Mode 0.162μm 5V 128x8 v YRN12808S16M5AB2_Y10
MTP SMIC Mixed Mode 0.162μm 5V 128x8 v YRN12808S16M5AC2_Y10
MTP UMC Mixed Mode 0.162μm 5V 128x8 v YRN12808U16M5AA2_Y00
MTP SMIC Mixed Mode 0.162μm 5V 128x8 v YRN12808S16M5AA2_Y10
MTP SMIC Mixed Mode 0.162μm 5V 128x8 v YRN12808S16M5AA2_B11
MTP HJTC Mixed Mode 0.162μm 5V 128x8 v YRN12808H16M5AA2_A12
MTP HJTC Mixed Mode 0.162μm 5V 128x8 v YRN12808H16M5AA2_Y10
MTP UMC Mixed Mode 0.162μm 5V 128x8 v YMN12808U16M5AA2_A10
MTP SMIC Mixed Mode 0.162μm 5V 128x8 v YEN12808S16M5AA2_A02
MTP UMC Mixed Mode 0.162μm 5V 128x8 v YE12808U16M5AA2_A00
MTP HJTC Mixed Mode 0.162μm 5V 128x8 v YE12808H16M5AA2_B00
MTP HJTC Mixed Mode 0.162μm 5V 128x8 v YE12808H16M5AA2_A05
Process Name
0.162um Mixed-Mode 3.3V/40V 1P2M Salicide Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP HJTC Mixed Mode 0.162μm 3.3V 128x8 v YEN12808H16M3AA2_A10
Process Name
0.18 um 1.8V/6V/12-40V LDMOS dual-gate isolated BCDLite Gen2 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Globalfoundries BCD 0.18μm 5V 4Kx32 v YMN4K32F18B5AA1_Y00
MTP Globalfoundries BCD 0.18μm 5V 6Kx32 v YMN6K32F18B5AA1_Y00
FTP Globalfoundries BCD 0.18μm 5V 4Kx32 v YFN4K32F18B5BA1_A00
FTP+Information Globalfoundries BCD 0.18μm 5V 16Kx16 v YFF16K16F18B5BA1_Y00
FTP+Information Globalfoundries BCD 0.18μm 5V 32Kx8 v YFF32K08F18B5BA1_Y00
FTP+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YFF8K32F18B5BA1_Y00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v YEN16K08F18B5AB1_A01
MTP+Information Globalfoundries BCD 0.18μm 5V 5Kx16 v YEF5K16F18B5BA1_A01
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5AA2_Y10
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5BA2_Y00
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YRN12808F18B5AA2_A10
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YMN8K32F18B5AA1_Y00
MTP Globalfoundries BCD 0.18μm 5V 6Kx32 v YMN6K32F18B5AB1_Y00
MTP Globalfoundries BCD 0.18μm 5V 16Kx8 v YEN16K08F18B5AA1_C01
MTP+Information Globalfoundries BCD 0.18μm 5V 5Kx32 v YEF5K32F18B5BA1_A10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B10
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B13
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BA1_B14
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BB1_C00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 16Kx8 v YEG16K08F18B5BC1_B11
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx14 v YEG8K14F18B5BA1_A00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YEG8K32F18B5AD1_Y00
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YEN8K32F18B5BA1_B00
MTP Globalfoundries BCD 0.18μm 5V 8Kx8 v YEN8K08F18B5AC1_A00
MTP Globalfoundries BCD 0.18μm 5V 4Kx32 v YEN4K32F18B5AA1_A00
MTP+Information Globalfoundries BCD 0.18μm 5V 2560x32 v YEF256032F18B5BA1_B11
MTP Globalfoundries BCD 0.18μm 5V 8Kx32 v YEN8K32F18B5AA1_A00
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Globalfoundries LG 0.18μm 5V 4Kx16 x YUN4K16F18L5BP1_C10
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x YUF2K16F18L5BA1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx16 x YUF1K16F18L5BA1_B10
MTP+Information Globalfoundries LG 0.18μm 3.3V 1Kx16 x YUF1K16F18L3AA1_B10
MTP+Information Globalfoundries LG 0.18μm 5V 4Kx16 x YNF4K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x YNF2K16F18L5BP1_Y10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x YNF2K16F18L3BB1_Y11
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx16 x YNF2K16F18L5BA1_A10
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 x YNF2K16F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BR1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BQ1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BP1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YMG8K16F18L5BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BA1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BC1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YMG8K16F18L3BA1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BP1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YMG4K16F18L5BP1_Y10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 16Kx8 v YMG16K08F18L5BA1_A10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YME8K16F18L5BA1_Y10
FTP+Information Globalfoundries LG 0.18μm 3.3V 4Kx8 v YFF4K08F18L3AA1_Y00
MTP+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEF8K16F18L3BB1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 16Kx8 v YEG16K08F18L3BB1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 16Kx16 v YEG16K16F18L5BB1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 1Kx14 v YEG1K14F18L5BB1_Y11
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BC1_A00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 2Kx16 v YEG2K16F18L5BT1_Y00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 4Kx16 v YEG4K16F18L3BA1_Y01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BB1_B01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BP1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 4Kx16 v YEG4K16F18L5BP1_B12
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx8 v YEG8K08F18L5BQ1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 3.3V 8Kx16 v YEG8K16F18L3BA1_B01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BB1_B00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BB1_C00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BC1_A10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BD1_A00
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BP1_B10
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BP1_C12
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BQ1_B02
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BQ1_C01
MTP+EEPROM+Information Globalfoundries LG 0.18μm 5V 8Kx16 v YEG8K16F18L5BS1_C10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 16Kx8 v YEE16K08F18L5BA1_B00
MTP+EEPROM Globalfoundries LG 0.18μm 5V 2Kx16 v YEE2K16F18L5BR1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 4Kx16 v YEE4K16F18L5BS1_Y10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BB1_Y10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BS1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_A10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_B00
MTP+Information Globalfoundries LG 0.18μm 3.3V 2Kx16 v YEF2K16F18L3BA1_A10
MTP+Information Globalfoundries LG 0.18μm 5V 2Kx32 v YEF2K32F18L5BB1_B00
MTP+Information Globalfoundries LG 0.18μm 5V 1Kx32 v YEF1K32F18L5BA1_A10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_B10
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx16 v YEE8K16F18L5BT1_B01
MTP+EEPROM Globalfoundries LG 0.18μm 5V 8Kx8 v YE8K08F18L5BA1_B00
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 8Kx32 v YMG8K32F18B5AB1_Y00
MTP+EEPROM+Information Globalfoundries BCD 0.18μm 5V 24Kx8 v YMG24K08F18B5AA1_Y10
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 1Kx8 v YME1K08F18B5AA1_Y00
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YEN12808F18B5AA2_Y00
EEPROM Globalfoundries BCD 0.18μm 5V 128x8 v YEN12808F18B5AA2_Y01
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 5Kx32 v YEE5K32F18B5AA1_A00
MTP+EEPROM Globalfoundries BCD 0.18μm 5V 5Kx32 v YEE5K32F18B5AA1_Y00
Process Name
0.18um MS and BCD Salicide 1.8V/5V/10V/12V/20V/35V/40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AB2_Y00
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18M5AA2_Y00
MTP SMIC BCD 0.18μm 5V 128x8 v YRN12808S18B5AB2_Y10
MTP SMIC BCD 0.18μm 5V 128x8 v YRN12808S18B5AB2_Y11
MTP SMIC BCD 0.18μm 5V 96x8 v YEN9608S18M5AA2_A00
MTP SMIC BCD 0.18μm 5V 96x8 v YEN9608S18M5AA2_A01
MTP SMIC BCD 0.18μm 5V 256x8 v YEN25608S18M5AA2_A01
MTP SMIC BCD 0.18μm 5V 512x8 v YE51208S18M5AA_Y00
Process Name
0.18um MS LCOS 1.8V/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 256x8 v YEN25608S18B5AA2_A00
Process Name
0.18um V3E BCD 1.8V/5V/6V/9V/12V/16V/20V/24V/30V/35V/40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC BCD 0.18μm 5V 256x8 v YRN25608S18B5AC2_A10
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BF1_A10
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BE1_A00
MTP+Information SMIC BCD 0.18μm 5V 8Kx32 v YMF8K32S18B5BD1_A01
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AA1_Y10
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AB1_A01
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AD1_A00
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AD1_Y00
FTP SMIC BCD 0.18μm 5V 128x8 x YGN12808S18B5AE1_A10
Process Name
0.28 um0.22 um Embedded High Voltage 3.3 V6.75 V13.5 V 2P5M P-Sub Polycide Gox65310 Low High Low Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP UMC HV 0.28μm 3.3V 128x8 v YE12808U28H3AB1_Y00
Process Name
0.35 um Mixed Mode 3.3V/ 5V 1P2M Salicide Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SMIC Mixed Mode 0.35μm 3.3V 128x8 v YE12808S35M3AA_Y00
Process Name
0.35um 5V/8V/10V/18V/25V/40V 2P3M BCD Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nuvoton BCD 0.35μm 5V 4x8 x YUO0408W35B5NA1_A01
OTP Nuvoton BCD 0.35μm 5V 4x8 x YUO0408W35B5NA1_A02
OTP Nuvoton BCD 0.35μm 5V 4x8 x YPN0408W35B5NA1_A00
Process Name
0.35um Mixed Mode 3.3V/5V 1P2M Salicide Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP HJTC Mixed Mode 0.35μm 3.3V 16x8 v YE1608H35M3AC_A00
MTP HJTC Mixed Mode 0.35μm 3.3V 16x8 v YE1608H35M3AC_A10
Process Name
0.35um(backend 0.32um) 3.3V,3.3V / 5V CMOS
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information Nuvoton LG 0.35μm 3.3V 4Kx14 x YUF4K14W35L3BA1_A11
EEPROM+Information Nuvoton LG 0.35μm 3.3V 1Kx14 x YU1K14W35L3AB_A02
FTP Nuvoton LG 0.35μm 3.3V 32x1 x YU3201W35L3AA_A01
MTP+Information Nuvoton LG 0.35μm 3.3V 2Kx14 x YM2K14W35L3AB_A01
MTP+Information Nuvoton LG 0.35μm 3.3V 2Kx16 x YM2K16W35L3AC1_A12
EEPROM+Information Nuvoton LG 0.35μm 3.3V 2Kx16 x YM2K16W35L3BA_A10
EEPROM+Information Nuvoton LG 0.35μm 3.3V 3328x16 x YM332816W35L3AC_A01
EEPROM+Information Nuvoton LG 0.35μm 3.3V 4608x16 x YM460816W35L3AC_A01
MTP+Information Nuvoton LG 0.35μm 3.3V 4Kx14 x YM4K14W35L3AA_A03
MTP+Information Nuvoton LG 0.35μm 3.3V 4Kx14 x YM4K14W35L3AB_A04
EEPROM+Information Nuvoton LG 0.35μm 3.3V 4Kx14 x YM4K14W35L3AB1_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 4Kx16 x YM4K16W35L3AC1_A12
MTP+Information Nuvoton LG 0.35μm 3.3V 8Kx8 x YM8K08W35L3BB1_A00
EEPROM+Information Nuvoton LG 0.35μm 3.3V 1664x16 x YM166416W35L3AC_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 1Kx14 x YM1K14W35L3AB_A01
EEPROM+Information Nuvoton LG 0.35μm 3.3V 2304x16 x YM230416W35L3AC_A00
EEPROM+Information Nuvoton LG 0.35μm 3.3V 8704x16 v YF870416W35L3AC_A01
MTP+Information Nuvoton LG 0.35μm 3V 8Kx8 v YF8K08W35L3BA_A01
MTP+Information Nuvoton LG 0.35μm 3.3V 8Kx16 v YF8K16W35L3AA_A05
MTP+Information Nuvoton LG 0.35μm 3.3V 4Kx8 v YF4K08W35L3BA_A01
MTP+Information Nuvoton LG 0.35μm 3.3V 2Kx8 v YF2K08W35L3BA_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 2Kx8 v YF2K08W35L3AA_A10
EEPROM+Information Nuvoton LG 0.35μm 3.3V 8Kx16 v YE8K16W35L3AB1_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 1Kx8 v YF1K08W35L3BA_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 16Kx8 v YF16K08W35L3AB_A06
MTP+Information Nuvoton LG 0.35μm 3.3V 16Kx8 v YF16K08W35L3BA_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 2Kx16 v YEF2K16W35L3AB1_A10
EEPROM+Information Nuvoton LG 0.35μm 3.3V 16Kx8 v YEF16K08W35L3BC1_A10
MTP+Information Nuvoton LG 0.35μm 3.3V 16Kx8 v YEF16K08W35L3BA1_A00
MTP+Information Nuvoton LG 0.35μm 3.3V 10Kx8 v YEF10K08W35L3BB1_A10
EEPROM+Information Nuvoton LG 0.35μm 3.3V 4Kx16 v YE4K16W35L3AB1_A00
EEPROM+Information Nuvoton LG 0.35μm 3.3V 2Kx16 v YE2K16W35L3AB1_A00
EEPROM Nuvoton LG 0.35μm 3.3V 256x1 v YE25601W35L3AA_A00
EEPROM+Information Nuvoton LG 0.35μm 3.3V 128x8 v YE12808W35L3AB_A00
EEPROM+Information Nuvoton LG 0.35μm 3.3V 16Kx8 v YE16K08W35L3BC1_A00
Process Name
1.2V/5V Mixed-Signal and Power Management Process(POR1.7)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Tower BCD 0.065μm 5V 2Kx32 v YFF2K32O65B5BA1_A10
Process Name
1.2V/5V Mixed-Signal and Power Management Process(POR1.9)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Tower BCD 0.065μm 5V 128x16 v YMN12816O65B5BA1_A00
MTP+Information Tower BCD 0.065μm 5V 8Kx32 v YEF8K32O65B5BA1_Y10
Process Name
8A Power 0.18um-E 6V_40V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP PSMC BCD 0.18μm 6V 256x8 v YRN25608P18H6AB2_A00
MTP PSMC BCD 0.18μm 5V 64x8 v YEN6408P18H6AA2_A00
Process Name
8A Power 0.18um-S 6V GP Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP PSMC BCD 0.18μm 6V 256x8 v YE25608P18H6AC2_Y00
Process Name
CanSemi Logic/0.18um 1P6M Industry_Baseline_Generic 5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP+Information Cansemi LG 0.18μm 5V 4Kx32 v YFF4K32G18L5BB1_A01
FTP+Information Cansemi LG 0.18μm 5V 2Kx16 v YFF2K16G18L5BA1_A00
FTP+Information Cansemi LG 0.18μm 5V 8Kx16 v YFF8K16G18L5BA1_A01
Process Name
CanSemi Logic/Analog/RF 0.18 um 1P6M Industry_Baseline_Generic Pure 3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Cansemi LG 0.18μm 3.3V 68x8 v YRN6808G18L3AB2_A00
FTP Cansemi LG 0.18μm 3.3V 128x8 v YRN12808G18L3AA2_A01
OTP Cansemi LG 0.18μm 3.3V 68x8 v YON6808G18L3AA2_A00
FTP Cansemi LG 0.18μm 3.3V 512x8 v YFN51208G18L3AA2_Y00
Process Name
CB015RL20001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM, 1P6M, SALICIDE, 1.8/6V(Vgs=1.8/6V, Vds=12/16.5/18/20/24/26/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP VIS BCD 0.15μm 6V 64x8 v YEN6408V15B6AC2_A03
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 64x8 v YE6408V15B6AA2_A00
Process Name
CB015RL23004-0.15UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/5/5.5/6/12/20/24/30V(Vgs=1.8/5V, Vds=1.8/5/5.5/6/12/20/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 6Kx32 v YEN6K32V15B5BA1_A10
Process Name
CB015RL23011-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer 18/20/24/30/35/40/60/80/90/100/120V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80/90/100/120V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 13x8 x YUN1308V15B5AA2_A00
MTP VIS BCD 0.15μm 5V 64x8 x YUN6408V15B5AA2_Y11
MTP+Information VIS BCD 0.15μm 6V 8Kx8 x YUF8K08V15B6BC2_A00
MTP VIS BCD 0.15μm 5V 64x8 x YSN6408V15B5AA2_Y10
MTP+Information VIS BCD 0.15μm 5V 4Kx8 x YNF4K08V15B6BA2_A01
MTP+Information VIS BCD 0.15μm 6V 512x8 v YMF51208V15B6BA2_Y00
MTP VIS BCD 0.15μm 5V 1Kx8 v YEN1K08V15B5BA2_A00
Process Name
CB015RL23019-0.15UM(Front-End/Back-End 0.18UM/0.15UM), BCD 1P6M, SALICIDE BURIED LAYER EPI, 1.8/5/6/9/12/16/20/24/29/30/40/45/60V (Vgs=1.8/5V, Vds=1.8/5/6/9/12/16/20/24/29/30/40/45/60V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.15μm 5V 3584x32 v YMN358432V15B5BA1_Y01
MTP VIS BCD 0.15μm 5V 8Kx32 v YMN8K32V15B5BB1_Y00
MTP VIS BCD 0.15μm 5V 6Kx32 v YMN6K32V15B5BA1_Y10
MTP VIS BCD 0.15μm 5V 6Kx32 v YEN6K32V15B5BB1_Y01
Process Name
CB025RL20008-0.25UM, CMOS BCD Low Ron LDMOS MiM, 1P5M, SALICIDE, 2.5/5V(Vgs=2.5/5V, Vds=12/18/24/30V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.25μm 5V 32x8 v YE3208V25B5AB2_A01
MTP VIS BCD 0.25μm 5V 16x8 v YE1608V25B5AB2_A00
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.25μm 5V 32x8 x YUN3208V25B5AA2_A00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AA_A03
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AA_A10
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_A00
MTP VIS BCD 0.25μm 5V 64x8 x YU6408V25B5AC_C00
MTP VIS BCD 0.25μm 5V 32x8 x YU3208V25B5AA2_A01
MTP VIS BCD 0.25μm 5V 512x8 v YRN51208V25B5AB2_A10
MTP VIS BCD 0.25μm 5V 64x8 v YEN6408V25B5AA2_A00
MTP VIS BCD 0.25μm 5V 64x8 v YEN6408V25B5AB2_A11
MTP VIS BCD 0.25μm 5V 64x8 v YE6408V25B5AC2_A00
Process Name
CB030RL10006-0.30UM, CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Deep N-Well, 5/8/12/18/24/30/40V(Vgs=5V, Vds=5/8/12/18/24/30/40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.3μm 5V 4x8 x YU0408V30B5AA_A00
Process Name
CB040RL10003-0.40UM(Front-End/Back-End 0.50UM/0.35UM), CMOS BCD Low Ron LDMOS PiP, 2P4M, POLYCIDE, Buried Layer EPI, 40V(Vgs=5/20/40V, Vds=5/20/40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS BCD 0.4μm 5V 64x10 v YEN6410V40B5AA2_A00
Process Name
CV011MD00010-0.11UM, CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, Deep N-Well, 1.5/3.3V(Vgs=1.5/3.3V, Vds=1.5/3.3V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.11μm 3.3V 16Kx32 v YEN16K32V11M3BA1_A00
MTP VIS HV 0.11μm 3.3V 64x32 v YEN6432V11M3BA1_Y00
FTP VIS HV 0.11μm 3.3V 6Kx32 v YEN6K32V11M3BA1_A11
FTP VIS HV 0.11μm 3.3V 4Kx32 v YEN4K32V11M3BA1_A10
Process Name
CV011MS00005-0.11UM High Voltage 1P6M SALICIDE 1.5/7/32V(Vgs=1.5/7/32V, Vds=1.5/7/32V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_B00
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_B01
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_B02
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_C00
FTP VIS HV 0.11μm 7V 512x8 x YUN51208V11H7AB2_C01
Process Name
CV015MD00016-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS High Voltage Mixed Signal Based DDD, 1P6M, SALICIDE, 1.8/3.3/18V(Vgs=1.8/3.3/18V, Vds=1.8/3.3/18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS HV 0.15μm 3.3V 4Kx32 v YEF4K32V15H3BA1_Y10
MTP VIS HV 0.15μm 3.3V 8Kx32 v YE8K32V15H3BD1_Y10
MTP+Information VIS HV 0.15μm 3.3V 2Kx32 v YE2K32V15H3BD1_A00
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP VIS HV 0.3μm 3.3V 64x10 v YRN6410V30H3AA1_Y10
MTP VIS HV 0.3μm 3.3V 36x8 v YRN3608V30H3AA1_Y00
EEPROM VIS HV 0.3μm 3.3V 1x8 v YE0108V30H3AA_Y10
Process Name
CV035MS00001-0.35UM, CMOS High Voltage Mixed Signal Based LDMOS, 2P4M, POLYCIDE, Buried Layer EPI, 3.3/40V(Vgs=3.3/40V, Vds=40V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information VIS HV 0.35μm 3.3V 8Kx8 v YF8K08V35H3BB_A00
Process Name
HB180ENH3-180nm 1.8V/5V/40V, 5V/40V BCDMOS Process High Performance Generation 3 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix BCD 0.18μm 5V 8Kx32 v YMN8K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 8Kx32 v YMN8K32X18B5AA1_Y11
MTP SKHynix BCD 0.18μm 5V 4Kx32 v YMN4K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 4Kx32 v YMN4K32X18B5BA1_A10
MTP SKHynix BCD 0.18μm 5V 4Kx32 v YMN4K32X18B5BB1_Y10
MTP SKHynix BCD 0.18μm 5V 12Kx32 v YMN12K32X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 12Kx32 v YMN12K32X18B5AA1_Y12
MTP SKHynix BCD 0.18μm 5V 16Kx8 v YMN16K08X18B5AA1_Y10
MTP SKHynix BCD 0.18μm 5V 16Kx32 v YMN16K32X18B5AA1_Y12
MTP SKHynix BCD 0.18μm 5V 32Kx8 v YMN32K08X18B5AA1_Y10
MTP+Information SKHynix BCD 0.18μm 5V 4Kx32 v YMF4K32X18B5AA1_C11
MTP+Information SKHynix BCD 0.18μm 5V 8Kx8 v YMF8K08X18B5BA1_A11
Process Name
HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM HHGRACE LG 0.095μm 5V 64x8 v YRN6408C95L5BA2_Y10
MTP HHGRACE LG 0.095μm 5V 4Kx16 v YMN4K16C95L5BA1_Y10
FTP+Information HHGRACE LG 0.095μm 5V 4Kx32 v YFF4K32C95L5BA1_Y10
Process Name
HJTC 0.18um BCD 1.8V/5V 1P6M High Voltage P-Sub Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP HJTC BCD 0.18μm 5V 32x8 v YEN3208H18B5AA2_A00
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SKHynix LG 0.11μm 3.3V 8Kx32 v YMN8K32X11L3BA1_Y00
MTP+Information SKHynix LG 0.11μm 3.3V 16Kx32 v YMF16K32X11L3BA1_Y10
MTP+Information SKHynix LG 0.11μm 3.3V 16Kx32 v YMF16K32X11L3AA1_Y11
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.13μm 3.3V 40x8 v YRN4008N13L3AA2_Y00
MTP SK keyfoundry LG 0.13μm 3.3V 512x8 v YRN51208N13L3AA2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 40x8 v YRN4008N13L3AA2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AF2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AD2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YRN25608N13L3AA2_Y00
MTP SK keyfoundry LG 0.13μm 3.3V 192x8 v YEN19208N13L3AA2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 128x8 v YEN12808N13L3AD2_A02
MTP SK keyfoundry LG 0.13μm 3.3V 512x8 v YEN51208N13L3AD2_A00
MTP SK keyfoundry LG 0.13μm 3.3V 256x8 v YEN25608N13L3AB2_A00
Process Name
HL16GF-0.16um 1.8/3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP SK keyfoundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_A00_110
MTP SK keyfoundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_A02_110
MTP SK keyfoundry LG 0.16μm 3.3V 512x8 v YEN51208N16L3AA2_Y01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YEN25608N16L3AB2_A01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YEN25608N16L3AB2_Y00_110
MTP SK keyfoundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_Y00_110
MTP SK keyfoundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_A01_110
MTP SK keyfoundry LG 0.16μm 3.3V 1Kx8 v YEN1K08N16L3AA2_A02_110
MTP SK keyfoundry LG 0.16μm 3.3V 512x8 v YE51208N18L3AD2_A02
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_Y00_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_B01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_A02
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AF2_A01_110
MTP SK keyfoundry LG 0.16μm 3.3V 256x8 v YE25608N18L3AD2_A02_110
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YUF2K16N18L5BA1_B00
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YUF2K16N18L5BA1_Y10
MTP+Information SK keyfoundry LG 0.18μm 5V 4Kx16 x YUF4K16N18L5BA1_B01
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YUF2K16N18L5BA1_A02
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx14 x YUF2K14N18L5AD1_A01
MTP SK keyfoundry LG 0.18μm 5V 2Kx16 x YNN2K16N18L5BB1_A10
MTP+Information SK keyfoundry LG 0.18μm 5V 4Kx16 x YNF4K16N18L5BA1_A00
MTP+Information SK keyfoundry LG 0.18μm 5V 2Kx16 x YNF2K16N18L5BB1_A00
MTP SK keyfoundry LG 0.18μm 3.3V 256x8 v YEN25608N18L3AE2_Y01
MTP SK keyfoundry LG 0.18μm 3.3V 256x8 v YEN25608N18L3AE2_A01
MTP+EEPROM SK keyfoundry LG 0.18μm 5V 8Kx16 v YEE8K16N18L5BA1_B00
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information HHGRACE BCD 0.09μm 5V 8Kx32 v YMF8K32C90B5AB1_A01
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP MXIC LG 0.18μm 5V 1Kx16 x YUN1K16M18L5BB1_A10
MTP MXIC LG 0.18μm 5V 1Kx16 x YUN1K16M18L5BC1_A10
MTP MXIC LG 0.18μm 5V 2Kx16 x YUN2K16M18L5AA1_A10
MTP MXIC LG 0.18μm 5V 2Kx16 x YUN2K16M18L5BF1_A10
MTP MXIC LG 0.18μm 5V 4Kx16 x YUN4K16M18L5BE1_A11
FTP+Information MXIC LG 0.18μm 5V 4Kx16 x YUF4K16M18L5BC1_A10
MTP+Information MXIC LG 0.18μm 5V 2Kx16 x YUF2K16M18L5BB1_A10
MTP+Information MXIC LG 0.18μm 5V 2Kx16 x YUF2K16M18L5BB1_A11_105
MTP+Information MXIC LG 0.18μm 5V 1Kx16 x YUF1K16M18L5BB1_A11_105
MTP+Information MXIC LG 0.18μm 5V 1Kx16 x YUF1K16M18L5BB1_A11_115
MTP+EEPROM+Information MXIC LG 0.18μm 5 V 2Kx32 v YEG2K32M18L5BC1_A11
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BE1_A10
MTP+EEPROM+Information MXIC LG 0.18μm 5V 2Kx32 v YEG2K32M18L5BE1_A10_105
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v YEF4K16M18L5BB1_Y10
MTP+Information MXIC LG 0.18μm 5V 4Kx16 v YEF4K16M18L5BB1_A10
Process Name
L18B-0.18um CMOS SPDM/SPTM/SPQM BCD(5V/18V)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM MXIC BCD 0.18μm 5V 8Kx16 v YEE8K16M18B5BA1_A05
Process Name
L18B1-0.18um CMOS SPDM/SPTM/SPQM BCD (5V/120V) (EPI)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP MXIC BCD 0.18μm 5V 16x8 x YVN1608M18B5ND3_Y00
Process Name
L50W-MXIC 0.5um CMOS DPTM POWER CMOS (5V12V) (TRIPLE WELL)
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM+Information MXIC LG 0.5μm 5V 64x8 v YEF6408M55L5AB1_A10
Process Name
LCDD 0.15um-S 3.3V/13.5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP PSMC LG 0.15μm 3.3V 512x8 x YU51208P15L3AA_A02
Process Name
LCDD 0.15um-S 3.3V_18V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP PSMC LG 0.15μm 3.3V 512x8 x YU51208P15L3AA_A01
Process Name
LCDD 0.15um-SC 3.3V_18V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+Information PSMC HV 0.15μm 3.3V 128x8 v YEF12808P15L3AA2_Y00
Process Name
LCDDr 110nm-N2 1.5V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nexchip HV 0.11μm 5V 2Kx8 x YUN2K08L11H5BA1_A00
OTP Nexchip HV 0.11μm 5V 3Kx8 x YUN3K08L11H5BC1_A05
OTP Nexchip HV 0.11μm 5V 2Kx8 x YGN2K08L11H5BB1_A00
OTP Nexchip HV 0.11μm 5V 3Kx8 x YGN3K08L11H5BA1_Y00
Process Name
LCDDr 110nm-N2 1.5V_6V_40V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
OTP Nexchip HV 0.11μm 5V 3Kx8 x YGN3K08L11H5BB1_Y00
Process Name
LCDDr 90nm-EP 1.32V_6V_40V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.09μm 5V 3Kx8 x YGN3K08L90H5BA1_Y00
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip HV 0.09μm 6V 256x8 x YUN25608L90H6AA2_Y00
FTP Nexchip HV 0.09μm 6V 512x8 x YUN51208L90H6AB2_A00
FTP Nexchip HV 0.09μm 6V 512x8 x YUN51208L90H6AB2_Y00
Process Name
LOGIC 110nm-LP 1.5V/5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx8 v YEG8K08L11L5BA1_A13
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BF2_A12
EEPROM Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BG2_A11
EEPROM Nexchip LG 0.11μm 5V 256x8 v YRN25608L11L5BC2_A10
OTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YPF4K16L11L5AA1_A10
OTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YPF2K16L11L5AA1_A10
OTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YPF2K16L11L5AB1_A10
MTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YNF2K16L11L5BA1_A10
MTP+Information Nexchip LG 0.11μm 5V 1Kx16 x YNF1K16L11L5BA1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BI1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BJ1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A14
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_B10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BD1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BD1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 8Kx16 v YMG8K16L11L5BA1_A13
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BE1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BH1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BI1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BL1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx32 v YMG4K32L11L5BC1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BC1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BA1_A11
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 4Kx16 v YMG4K16L11L5BA1_B10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx32 v YMG2K32L11L5BB1_A01
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 2Kx16 v YMG2K16L11L5BE1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 1Kx14 v YMG1K14L11L5BA1_A10
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A03
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YMG16K08L11L5BB1_A04
MTP+Information Nexchip LG 0.11μm 5V 16Kx8 v YMF16K08L11L5BB1_A00
MTP+EEPROM Nexchip LG 0.11μm 5V 8Kx32 v YME8K32L11L5BA1_Y10
FTP Nexchip LG 0.11μm 5V 512x16 x YGN51216L11L5AA1_Y00
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AO1_Y10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AA1_Y00
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AM1_Y10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AL1_A10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AM1_Y00
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AA1_Y10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AB1_A11
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AC1_A00
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AD1_A10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AE1_A10
FTP+Information Nexchip LG 0.11μm 5V 4Kx16 x YGF4K16L11L5AK1_Y00
FTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YGF2K16L11L5AA1_A13
FTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YGF2K16L11L5AA1_A14
FTP+Information Nexchip LG 0.11μm 5V 2Kx16 x YGF2K16L11L5AC1_A00
FTP+Information Nexchip LG 0.11μm 5V 1Kx14 x YGF1K14L11L5AC1_A10
FTP+Information Nexchip LG 0.11μm 5V 1Kx16 x YGF1K16L11L5AB1_A00
MTP+EEPROM+Information Nexchip LG 0.11μm 5V 16Kx8 v YEG16K08L11L5BA1_A00
Process Name
LOGIC 150nm-FPS 3.3V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP Nexchip LG 0.15μm 3.3V 128x8 v YFN12808L15L3AA2_Y00
Process Name
Silterra D18V BCD 180nm Gen3 Tech
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BB2_Y10
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BA2_A14
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BA2_A12
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BA2_A13
EEPROM Silterra BCD 0.18μm 5V 128x8 v YRN12808R18B5BA2_A11
FTP+Information Silterra BCD 0.18μm 5V 4Kx16 x YNF4K16R18B5AA1_A00
FTP+Information Silterra BCD 0.18μm 5V 4Kx16 x YNF4K16R18B5AA1_A11
FTP+Information Silterra BCD 0.18μm 5V 2Kx14 x YNF2K14R18B5AA1_A10
FTP+Information Silterra BCD 0.18μm 5V 4Kx16 x YGF4K16R18B5AA1_Y10
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP tsmc BCD 0.18μm 5V 64x8 v YMN6408T18B5AA2_Y00
MTP tsmc BCD 0.18μm 5V 8Kx32 v YMN8K32T18B5BA1_Y00
MTP+Information tsmc BCD 0.18μm 5V 4Kx32 v YMF4K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BB1_A10
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BC1_A00
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YMF8K32T18B5BE1_A10
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BA1_A00
MTP+Information tsmc BCD 0.18μm 5V 6Kx32 v YMF6K32T18B5BB1_A00
MTP+Information tsmc BCD 0.18μm 5V 24Kx8 v YMF24K08T18B5BA1_A10
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YMF16K32T18B5BD1_Y00
MTP+Information tsmc BCD 0.18μm 5V 16Kx8 v YMF16K08T18B5BB1_A00
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YMF16K32T18B5BA1_Y10
MTP+Information tsmc BCD 0.18μm 5V 4Kx32 v YEF4K32T18B5BE1_A12
MTP+Information tsmc BCD 0.18μm 5V 8Kx32 v YEF8K32T18B5BE1_A11
MTP tsmc BCD 0.18μm 5V 128x8 v YEN12808T18B5AB2_Y10
MTP tsmc BCD 0.18μm 5V 12Kx32 v YEN12K32T18B5BB1_Y00
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_Y00
MTP tsmc BCD 0.18μm 5V 64x16 v YEN6416T18B5AB2_Y00
MTP tsmc BCD 0.18μm 5V 64x8 v YEN6408T18B5AA2_A00
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_Y10
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AD2_A00
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AE2_A00
MTP tsmc BCD 0.18μm 5V 32x8 v YEN3208T18B5AB2_B10
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YEF16K32T18B5BD1_Y00
MTP+Information tsmc BCD 0.18μm 5V 16Kx32 v YEF16K32T18B5BE1_A00
FTP+Information tsmc BCD 0.18μm 5V 16Kx8 v YEF16K08T18B5BA1_A11
Process Name
UMC 0.18 um BCD 1.8 V/5.0 V 1P6M High Voltage P-Sub Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP UMC BCD 0.18μm 5V 64x2 x YU6402U18B5AD2_A00
FTP UMC BCD 0.18μm 5V 32x8 x YU3208U18B5AA_A06
FTP UMC BCD 0.18μm 5V 32x8 x YU3208U18B5AA_A05
FTP UMC BCD 0.18μm 5V 32x8 x YU3208U18B5AA_A03
FTP UMC BCD 0.18μm 5V 64x8 v YE6408U18B5AA_A00
FTP UMC BCD 0.18μm 5V 32x8 v YE3208U18B5AA_A02
Process Name
UMC 0.18um Logic 1.8V/3.3V 1P6M Generic II Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP UMC LG 0.18μm 3.3V 2Kx8 v YF2K08U18L3BA_A03
Process Name
UMC 0.25um BCD 2P5M P-Sub Polycide Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
MTP UMC BCD 0.25μm 5V 128x8 v YE12808U25B5AG2_A01
Process Name
UMC 0.28 um Embedded High Voltage 3.3 V/9 V/18 V 2P5M P-Sub Polycide Gox65/435 Process
Category Foundry Process
Type		 Process
Node		 IO device
Type		 Density Charge
Pump 		IP Size
(µm × µm)		 IP Name
FTP UMC HV 0.28μm 3.3V 64x8 v YEN6408U28H3AA1_A00
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