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Key Feature
Customized IP
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | Globalfoundries | LG | 0.15μm | 3.3V | 8Kx16 | v | YEF8K16F15L3BA1_B11 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 2Kx16 | v | YEG2K16F15L5BA1_B11 | |
FTP+Information | Globalfoundries | LG | 0.15μm | 3.3V | 16Kx8 | v | YMF16K08F15L3BA1_A00 |
Key Feature
Customized IP
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 8Kx16 | v | YMG8K16F18B5BA1_A10 | |
MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 16Kx8 | v | YMG16K08F18B5BA1_A00 | |
MTP+Information | Globalfoundries | BCD | 0.18μm | 5V | 24Kx8 | v | YMF24K08F18B5BA1_A10 | |
MTP+Information | Globalfoundries | BCD | 0.18μm | 5V | 2560x32 | v | YEF256032F18B5BA1_C10 |
Key Feature
Customized IP
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 8Kx16 | v | YMG8K16F18L3BE1_A10 | |
MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx32 | v | YEF2K32F18L5BA1_B10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 8Kx16 | v | YEG8K16F18L3BC1_B00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 5V | 4Kx16 | v | YMG4K16F18L5BB1_A10 |
Key Feature
Customized IP
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 8Kx32 | v | YEG8K32F18B5AA1_Y10 |
Key Feature
Customized IP
Process Name
CB015RL23002-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS BCD Low Ron LDMOS MiM Isolated, 1P6M, SALICIDE, Buried Layer EPI, 1.8/6/8/10/12/18/20/24/30/35/40/60/80V(Vgs=1.8/6V, Vds=1.8/6/8/10/12/18/20/24/30/35/40/60/80V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | VIS | BCD | 0.15μm | 5V | 64x8 | x | YUN6408V15B5AA2_A00 |
Key Feature
Customized IP
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AD2_B01 | |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AD2_B02 | |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AD2_A00 | |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AD2_B00 | |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AB2_A01 |
Key Feature
Customized IP
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | HHGRACE | LG | 0.18μm | 5V | 4Kx16 | x | YU4K16C18L5AC1_A00 | |
MTP | HHGRACE | LG | 0.18μm | 5V | 1Kx14 | x | YU1K14C18L5AC1_A00 |
Key Feature
Customized IP
Process Name
HL13G-0.13um 1.2V/3.3V(2.5V) Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | SK keyfoundry | LG | 0.13μm | 3.3V | 256x8 | v | YRN25608N13L3AB2_Y00 | |
MTP | SK keyfoundry | LG | 0.13μm | 3.3V | 256x8 | v | YEN25608N13L3AA2_A02 |
Key Feature
Customized IP
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | SK keyfoundry | LG | 0.18μm | 5V | 4Kx14 | x | YUF4K14N18L5AD1_A10 | |
MTP+Information | SK keyfoundry | LG | 0.18μm | 5V | 2Kx16 | x | YNF2K16N18L5BC1_A10 | |
MTP | SK keyfoundry | LG | 0.18μm | 5V | 4Kx16 | x | YNN4K16N18L5BB1_A10 | |
MTP | SK keyfoundry | LG | 0.18μm | 5V | 4Kx16 | x | YNN4K16N18L5BA1_A00 |
Key Feature
Customized IP
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 4Kx32 | v | YMG4K32M18L5BA1_A10_105 |
Key Feature
Customized IP
Process Name
LCDDr 110nm-SUPER 1.5V_6V_32V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP | Nexchip | HV | 0.11μm | 3.3V | 512x8 | x | YUN51208L11H5BC2_A00 | |
FTP | Nexchip | HV | 0.11μm | 1.5V | 512x8 | x | YGN51208L11H5BA2_A00 |
Key Feature
Customized IP
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP+Information | Nexchip | LG | 0.11μm | 5V | 1Kx14 | x | YGF1K14L11L5AA1_A10 |
Key Feature
Customized IP
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | tsmc | BCD | 0.18μm | 5V | 6Kx32 | v | YMF6K32T18B5BD1_A00 |
Process Name
0.153um 5V CMOS EN Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP+Information | Rongsemi | LG | 0.153μm | 5V | 8Kx16 | v | YFF8K16RA153L5BA1_A00 | |
FTP+Information | Rongsemi | LG | 0.153μm | 5V | 16Kx8 | v | YFF16K08RA153L5BA1_A10 |
Process Name
0.15um 3.3V/5Vdual-gate MCU Technology Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMG8K16F15L5BC1_A00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMG8K16F15L5BC1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMG8K16F15L5BC1_A11 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMG8K16F15L5BA1_A00 | |
MTP+Information | Globalfoundries | LG | 0.15μm | 5V | 6Kx16 | v | YMG6K16F15L5BA1_A00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx8 | v | YMG8K08F15L5BA1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx16 | v | YMG4K16F15L5BC1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx16 | v | YMG4K16F15L5BE1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx16 | v | YMG4K16F15L5BB1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx16 | v | YMG4K16F15L5BB1_A00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.15μm | 3.3V | 16Kx16 | v | YMG16K16F15L3BA1_A00 | |
MTP+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMF8K16F15L5BB1_A01 | |
FTP+Information | Globalfoundries | LG | 0.15μm | 5V | 1Kx16 | x | YGF1K16F15L5AA1_A10 | |
FTP+Information | Globalfoundries | LG | 0.15μm | 5V | 4Kx16 | x | YGF4K16F15L5AA1_A10 | |
MTP+Information | Globalfoundries | LG | 0.15μm | 5V | 8Kx16 | v | YMG8K16F15L5BA1_A01 |
Process Name
0.18um 1.8V/6V/10-35V LDMOS dual-gate isolated BCDlite Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 5Kx32 | v | YEG5K32F18B5BA1_A00 | |
MTP+Information | Globalfoundries | BCD | 0.18μm | 5V | 8Kx8 | v | YMF8K08F18B5BA1_A00 |
Process Name
0.18um 3.3V/(5V)6Vdual-gate MCU Technology Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx32 | v | YEF2K32F18L5BB1_A01 | |
MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 4Kx32 | v | YEF4K32F18L5BB1_A01 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 16Kx8 | v | YEG16K08F18L3BB1_B00 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 1Kx16 | v | YEG1K16F18L3BA1_A10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 5V | 2Kx16 | v | YEG2K16F18L5BP1_B10 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 4Kx16 | v | YEG4K16F18L3BA1_B11 | |
MTP+EEPROM+Information | Globalfoundries | LG | 0.18μm | 3.3V | 8Kx16 | v | YEG8K16F18L3BA1_B00 | |
MTP+EEPROM | Globalfoundries | LG | 0.18μm | 3.3V | 4Kx16 | v | YEE4K16F18L3BA1_B10 | |
MTP+Information | Globalfoundries | LG | 0.18μm | 5V | 1Kx32 | v | YEF1K32F18L5BA1_A11 |
Process Name
0.18UM ISOLATED 1.8V/5V(6V)/40V-65V BCDlite Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Globalfoundries | BCD | 0.18μm | 5V | 8Kx32 | v | YEG8K32F18B5BA1_A12 |
Process Name
90nm_BCD_Low Power G3_1.5V/5V(Vgs),5V/9V/12V/24V/30V(Vds)_FAB7 Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP+Information | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YMF8K32C90B5AH1_A00 |
Process Name
CB015RL23014-0.15UM(FRONT-END/BACK-END 0.153UM/0.18UM) BCD 1P6M SALICIDE BURIED LAYER EPI 3.3/5/17/23/30V(Vgs=3.3V, Vds=3.3/5/17/23/30V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AC2_A00 | |
EEPROM | VIS | BCD | 0.15μm | 3.3V | 128x8 | v | YRN12808V15B3AB2_A00 |
Process Name
CB025RL23011-0.25UM, CMOS BCD Low Ron LDMOS MiM Isolated, 1P5M, SALICIDE, Buried Layer EPI, 2.5/5V(Vgs=2.5/5V, Vds=12/20/30/40/50/60/80V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | VIS | BCD | 0.25μm | 5V | 64x8 | x | YU6408V25B5AC_D01 | |
MTP | VIS | BCD | 0.25μm | 5V | 64x8 | x | YU6408V25B5AC_D00 |
Process Name
CM015MP21001-0.15UM(Front-End/Back-End 0.18UM/0.15UM), CMOS Mixed Signal MS Low Power MiM Al, 1P6M, SALICIDE, Deep N-Well, 1.8/3.3V(Vgs=1.8/3.3V, Vds=1.8/3.3V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | VIS | Mixed Mode | 0.15μm | 3.3V | 2Kx32 | v | YEF2K32V15M3BA1_A11 |
Process Name
CV030MF00003-0.30UM, CMOS High Voltage Mixed Signal Based DDD Enhance, 2P4M, POLYCIDE, 3.3/18V(Vgs=3.3/18V, Vds=18V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | VIS | HV | 0.3μm | 3.3V | 36x8 | v | YMN3608V30H3AA1_A00 |
Process Name
HG_0.18um_Logic_Generic(CE OTP)_3.3V/5V_1P6M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | HHGRACE | LG | 0.18μm | 5V | 2Kx16 | x | YU2K16C18L5AB1_A00 |
Process Name
HG_95nm_Embedded OTP_MTP process Low Power_5V_HHGrace_1P5M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
OTP+Information | HHGRACE | LG | 0.095μm | 5V | 4Kx8 | v | YEG4K08C95L5BB1_A11 |
Process Name
HL110LP-110nm Logic CMOS Low Power Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | SKHynix | LG | 0.11μm | 3.3V | 8Kx32 | v | YMN8K32X11L3BA1_A00 | |
MTP+Information | SKHynix | LG | 0.11μm | 3.3V | 7Kx32 | v | YMF7K32X11L3BA1_A00 | |
MTP+Information | SKHynix | LG | 0.11μm | 3.3V | 7Kx32 | v | YMF7K32X11L3BA1_A01 |
Process Name
HL18GFL-0.18um 1.8/3.3/5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | SK keyfoundry | LG | 0.18μm | 5V | 2Kx16 | x | YNF2K16N18L5BC1_A00 | |
MTP+Information | SK keyfoundry | LG | 0.18μm | 5V | 32x16 | x | YNF3216N18L5BA1_A00 |
Process Name
HP18EC30-0.18um 1.8V/6.0V, 8V, 12V, 16V, 20V, 24V, 30V(Vg=6.0V), 24/30V (Vg=18V) BCD Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP | SK keyfoundry | BCD | 0.18μm | 6V | 64x8 | x | YUN6408N18B6AB2_A00 |
Process Name
HW_90nm_BCD_Low Power_1.5V/5V(Vgs), 5V/9V/12V/24V(Vds)_1P7M Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+Information | HHGRACE | BCD | 0.09μm | 5V | 8Kx32 | v | YMF8K32C90B5AB1_A02 |
Process Name
L18A - 0.18um CMOS 1P6M LOGIC (1.8V/5V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 8Kx16 | v | YMG8K16M18L5BA1_A10 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 2Kx32 | v | YEG2K32M18L5BA1_A11 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 2Kx32 | v | YEG2K32M18L5BB1_A12 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 2Kx32 | v | YEG2K32M18L5BB1_A13 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 2Kx32 | v | YEG2K32M18L5BB1_A14 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 4Kx16 | v | YEG4K16M18L5BA1_A10 | |
MTP+EEPROM+Information | MXIC | LG | 0.18μm | 5V | 4Kx32 | v | YEG4K32M18L5BC1_A10 |
Process Name
L18B-0.18um CMOS SPDM/SPTM/SPQM BCD(5V/18V)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
EEPROM | MXIC | BCD | 0.18μm | 5V | 64x8 | v | YRN6408M18B5AA2_A10 |
Process Name
L18B1-0.18um CMOS SPDM/SPTM/SPQM BCD (5V/120V) (EPI)
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP | MXIC | BCD | 0.18μm | 5V | 16x8 | x | YVN1608M18B5NA3_A02 | |
FTP | MXIC | BCD | 0.18μm | 5V | 16x8 | x | YVN1608M18B5NA4_A00 | |
FTP | MXIC | BCD | 0.18μm | 5V | 16x8 | x | YVN1608M18B5NA3_A03 | |
FTP | MXIC | BCD | 0.18μm | 5V | 16x8 | x | YVN1608M18B5NA3_A00 | |
FTP | MXIC | BCD | 0.18μm | 5V | 16x8 | x | YVN1608M18B5NA3_A01 |
Process Name
LCDDr 90nm-MP 1.32V_6V_32V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
FTP+Information | PSMC | HV | 0.09μm | 5V | 4Kx8 | x | YGF4K08P90H5BB1_A10 |
Process Name
LOGIC 110nm-G 1.5V_3.3V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | Nexchip | LG | 0.11μm | 3.3V | 256x8 | v | YRN25608L11L3AB2_A00 |
Process Name
LOGIC 110nm-LP2 1.5V_5V
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AI1_A00 | |
MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AA1_A10 | |
MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AD1_A10 | |
MTP+EEPROM+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YMG4K16L11L5AF1_A00 | |
FTP+Information | Nexchip | LG | 0.11μm | 5V | 8Kx16 | v | YFF8K16L11L5BA1_A10 | |
FTP+Information | Nexchip | LG | 0.11μm | 5V | 4Kx16 | v | YFF4K16L11L5BA1_A11 | |
FTP+Information | Nexchip | LG | 0.11μm | 5V | 6Kx16 | v | YFF6K16L11L5BA1_A10 |
Process Name
TSMC 0.18 UM CMOS HIGH VOLTAGE MIXED SIGNAL BASED GENERAL PURPOSE GEN-3 BCD FSG AL 1P6M SALICDE 1.8/5/6/9/12/16/20/24/29/45/VG1.8/5V AND 5/6/9/12/16/20/24/29/45/VG5V Process
Category | Foundry | Process Type |
Process Node |
IO device Type |
Density | Charge Pump |
IP Size (µm × µm) |
IP Name |
MTP | tsmc | BCD | 0.18μm | 5V | 32x8 | v | YEN3208T18B5AB2_C01 |